Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI3429EDV-T1-GE3

SI3429EDV-T1-GE3

SI3429EDV-T1-GE3

Part NumberSI3429EDV-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CHAN 20V TSOP6S

DatasheetSI3429EDV

Package / CaseSOT-23-6 Thin, TSOT-23-6

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 20V 8A (Ta), 8A (Tc) 4.2W (Tc) Surface Mount 6-TSOP

To learn about the specification of SI3429EDV-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI3429EDV-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI3429EDV-T1-GE3.
We are offering SI3429EDV-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI3429EDV-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI3429EDV
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	8A (Ta), 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	21mOhm @ 4A, 10V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	118nC @ 10V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	4085pF @ 50V
FET Feature	-
Power Dissipation (Max)	4.2W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	6-TSOP
Package / Case	SOT-23-6 Thin, TSOT-23-6

SI3429EDV-T1-GE3 - Related Products

	IXTP140P05T	IXYS, P-Channel 50V 140A (Tc) 298W (Tc) Through Hole TO-220AB, TrenchP™	View
	SI2319DS-T1-GE3	Vishay Siliconix, P-Channel 40V 2.3A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236), TrenchFET®	View
	SI2343CDS-T1-GE3	Vishay Siliconix, P-Channel 30V 5.9A (Tc) 1.25W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236), TrenchFET®	View
	SI7615ADN-T1-GE3	Vishay Siliconix, P-Channel 20V 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	RS3E075ATTB	Rohm Semiconductor, P-Channel 30V 2W (Ta) Surface Mount 8-SOP,	View
	IRLML6402TRPBF	Infineon Technologies, P-Channel 20V 3.7A (Ta) 1.3W (Ta) Surface Mount Micro3™/SOT-23, HEXFET®	View
	FDWS9508L-F085	ON Semiconductor, P-Channel 40V 80A (Tc) 214W (Tj) Surface Mount 8-PQFN (5x6), Automotive, AEC-Q101, PowerTrench®	View
	FDMC5614P	ON Semiconductor, P-Channel 60V 5.7A (Ta), 13.5A (Tc) 2.1W (Ta), 42W (Tc) Surface Mount 8-MLP (3.3x3.3), PowerTrench®	View
	NVR5124PLT1G	ON Semiconductor, P-Channel 60V 1.1A (Ta) 470mW (Ta) Surface Mount SOT-23-3 (TO-236), Automotive, AEC-Q101	View
	DMP3037LSS-13	Diodes Incorporated, P-Channel 30V 5.8A (Ta) 1.2W (Ta) Surface Mount 8-SO,	View
	FDMC6675BZ	ON Semiconductor, P-Channel 30V 9.5A (Ta), 20A (Tc) 2.3W (Ta), 36W (Tc) Surface Mount 8-MLP (3.3x3.3), PowerTrench®	View
	NTMS10P02R2G	ON Semiconductor, P-Channel 20V 8.8A (Ta) 1.6W (Ta) Surface Mount 8-SOIC,	View

SI3429EDV-T1-GE3 - Tags

SI3429EDV-T1-GE3 SI3429EDV-T1-GE3 PDF SI3429EDV-T1-GE3 datasheet SI3429EDV-T1-GE3 specification SI3429EDV-T1-GE3 image SI3429EDV-T1-GE3 India Renesas Electronics India SI3429EDV-T1-GE3 buy SI3429EDV-T1-GE3 SI3429EDV-T1-GE3 price SI3429EDV-T1-GE3 distributor SI3429EDV-T1-GE3 supplier SI3429EDV-T1-GE3 wholesales