SI3429EDV-T1-GE3
SI3429EDV-T1-GE3
Part Number SI3429EDV-T1-GE3
Description MOSFET P-CHAN 20V TSOP6S
Package / Case SOT-23-6 Thin, TSOT-23-6
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description P-Channel 20V 8A (Ta), 8A (Tc) 4.2W (Tc) Surface Mount 6-TSOP
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SI3429EDV-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SI3429EDV
Standard Package 3000
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Tape & Reel (TR)
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 8A (Ta), 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 21mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 118nC @ 10V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 4085pF @ 50V
FET Feature -
Power Dissipation (Max) 4.2W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 6-TSOP
Package / Case SOT-23-6 Thin, TSOT-23-6
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