SI8851EDB-T2-E1
SI8851EDB-T2-E1
Part Number SI8851EDB-T2-E1 Description MOSFET P-CH 20V 7.7A MICRO FOOT Package / Case 30-XFBGAUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 20V 7.7A (Ta) 660mW (Ta) Surface Mount Power Micro Foot® (2.4x2)
To learn about the specification of SI8851EDB-T2-E1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI8851EDB-T2-E1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI8851EDB-T2-E1.
We are offering SI8851EDB-T2-E1 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SI8851EDB-T2-E1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SI8851EDB Standard Package 1 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 7.7A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 8mOhm @ 7A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 180nC @ 8V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 6900pF @ 10V FET Feature - Power Dissipation (Max) 660mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package Power Micro Foot® (2.4x2) Package / Case 30-XFBGA Base Part Number SI8851
SI8851EDB-T2-E1 - Related ProductsMore >>
RQ1A070ZPTR Rohm Semiconductor, P-Channel 12V 7A (Ta) 700mW (Ta) Surface Mount TSMT8,
View
SIA429DJT-T1-GE3 Vishay Siliconix, P-Channel 20V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single, TrenchFET®
View
PMZ1200UPEYL Nexperia USA Inc., P-Channel 30V 410mA (Ta) 310mW (Ta), 1.67W (Tc) Surface Mount DFN1006-3,
View
SI2307CDS-T1-E3 Vishay Siliconix, P-Channel 30V 3.5A (Tc) 1.1W (Ta), 1.8W (Tc) Surface Mount SOT-23-3 (TO-236), TrenchFET®
View
CSD23202W10 Texas Instruments, P-Channel 12V 2.2A (Ta) 1W (Ta) Surface Mount 4-DSBGA (1x1), NexFET™
View
SI2323CDS-T1-GE3 Vishay Siliconix, P-Channel 20V 6A (Tc) 1.25W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236), TrenchFET®
View
CEDM8001VL TR Central Semiconductor Corp, P-Channel 20V 100mA (Ta) 100mW (Ta) Surface Mount SOT-883VL,
View
IRF9520PBF Vishay Siliconix, P-Channel 100V 6.8A (Tc) 60W (Tc) Through Hole TO-220AB,
View
SPP08P06PHXKSA1 Infineon Technologies, P-Channel 60V 8.8A (Tc) 42W (Tc) Through Hole PG-TO220-3, SIPMOS®
View
IRFR9220TRLPBF Vishay Siliconix, P-Channel 200V 3.6A (Tc) 42W (Tc) Surface Mount,
View
CPH3348-TL-W ON Semiconductor, P-Channel 12V 3A (Ta) 1W (Ta) Surface Mount 3-CPH,
View
MCM1208-TP Micro Commercial Co, P-Channel 12V 8A (Ta) Surface Mount DFN2020-6J,
View
SI8851EDB-T2-E1 - Tags
English
