Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIA429DJT-T1-GE3

SIA429DJT-T1-GE3

SIA429DJT-T1-GE3

Part NumberSIA429DJT-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 20V 12A SC-70

DatasheetSiA429DJT

Package / CasePowerPAK® SC-70-6

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 20V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single

To learn about the specification of SIA429DJT-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIA429DJT-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIA429DJT-T1-GE3.
We are offering SIA429DJT-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIA429DJT-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SiA429DJT
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Rds On (Max) @ Id, Vgs	20.5mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	62nC @ 8V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	1750pF @ 10V
FET Feature	-
Power Dissipation (Max)	3.5W (Ta), 19W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SC-70-6 Single
Package / Case	PowerPAK® SC-70-6

SIA429DJT-T1-GE3 - Related Products

	RSR025P03TL	Rohm Semiconductor, P-Channel 30V 2.5A (Ta) 1W (Ta) Surface Mount TSMT3,	View
	DMP10H4D2S-7	Diodes Incorporated, P-Channel 100V 270mA (Ta) 380mW (Ta) Surface Mount SOT-23,	View
	IRFR9220PBF	Vishay Siliconix, P-Channel 200V 3.6A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-Pak,	View
	STL6P3LLH6	STMicroelectronics, P-Channel 30V 6A (Tc) 2.9W (Tc) Surface Mount PowerFlat™ (3.3x3.3), STripFET™ H6	View
	STL12P6F6	STMicroelectronics, P-Channel 60V 4A (Tc) 75W (Tc) Surface Mount PowerFlat™ (5x6), DeepGATE™, STripFET™ VI	View
	DMP2160UW-7	Diodes Incorporated, P-Channel 20V 1.5A (Ta) 350mW (Ta) Surface Mount SOT-323,	View
	FDC654P	ON Semiconductor, P-Channel 30V 3.6A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6, PowerTrench®	View
	SFT1345-TL-H	ON Semiconductor, P-Channel 100V 11A (Ta) 1W (Ta), 35W (Tc) Surface Mount TP-FA,	View
	SI7469DP-T1-E3	Vishay Siliconix, P-Channel 80V 28A (Tc) 5.2W (Ta), 83.3W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	IRFR9120NTRPBF	Infineon Technologies, P-Channel 100V 6.6A (Tc) 40W (Tc) Surface Mount D-Pak, HEXFET®	View
	TP5335K1-G	Microchip Technology, P-Channel 350V 85mA (Tj) 360mW (Ta) Surface Mount TO-236AB (SOT23),	View
	RSL020P03FRATR	Rohm Semiconductor, P-Channel 30V 2A (Ta) 1W (Ta) Surface Mount TUMT6, Automotive, AEC-Q101	View

SIA429DJT-T1-GE3 - Tags

SIA429DJT-T1-GE3 SIA429DJT-T1-GE3 PDF SIA429DJT-T1-GE3 datasheet SIA429DJT-T1-GE3 specification SIA429DJT-T1-GE3 image SIA429DJT-T1-GE3 India Renesas Electronics India SIA429DJT-T1-GE3 buy SIA429DJT-T1-GE3 SIA429DJT-T1-GE3 price SIA429DJT-T1-GE3 distributor SIA429DJT-T1-GE3 supplier SIA429DJT-T1-GE3 wholesales