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NVTR01P02LT1G


NVTR01P02LT1G

Part NumberNVTR01P02LT1G

Manufacturer

Description

Datasheet

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

NVTR01P02LT1G - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package1
ManufacturerON Semiconductor
Series-
PackagingCut Tape (CT)
Part StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C1.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs220mOhm @ 750mA, 4.5V
Vgs(th) (Max) @ Id1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs3.1nC @ 4V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds225pF @ 5V
FET Feature-
Power Dissipation (Max)400mW (Ta)
Operating Temperature-
Mounting TypeSurface Mount
Supplier Device PackageSOT-23-3
Package / CaseTO-236-3, SC-59, SOT-23-3

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