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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet NX2301P
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 120mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6nC @ 4.5V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 380pF @ 6V
FET Feature -
Power Dissipation (Max) 400mW (Ta), 2.8W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-236AB
Package / Case TO-236-3, SC-59, SOT-23-3
TP2502N8-G
Microchip Technology, P-Channel 20V 630mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89),
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RSS060P05FRATB
Rohm Semiconductor, P-Channel 45V 6A (Ta) 2W (Ta) Surface Mount 8-SOP, Automotive, AEC-Q101
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BMS3003-1E
ON Semiconductor, P-Channel 60V 78A (Ta) 2W (Ta), 40W (Tc) Through Hole TO-220F-3SG,
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SI2315BDS-T1-GE3
Vishay Siliconix, P-Channel 12V 3A (Ta) 750mW (Ta) Surface Mount, TrenchFET®
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SSM3J351R,LF
Toshiba Semiconductor and Storage, P-Channel 60V 3.5A (Ta) 2W (Ta) Surface Mount SOT-23F, U-MOSVI
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IXTH50P10
IXYS, P-Channel 100V 50A (Tc) 300W (Tc) Through Hole TO-247 (IXTH),
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DMP21D0UFB4-7B
Diodes Incorporated, P-Channel 20V 770mA (Ta) 430mW (Ta) Surface Mount X2-DFN1006-3,
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DMP1011UCB9-7
Diodes Incorporated, P-Channel 8V 10A (Ta) 890mW (Ta) Surface Mount U-WLB1515-9,
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SI1499DH-T1-E3
Vishay Siliconix, P-Channel 8V 1.6A (Tc) 2.5W (Ta), 2.78W (Tc) Surface Mount SC-70-6 (SOT-363), TrenchFET®
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PMN42XPEAH
Nexperia USA Inc., P-Channel 20V 5.7A (Ta) 500mW (Ta), 8.33W (Tc) Surface Mount 6-TSOP, Automotive, AEC-Q101, TrenchMOS™
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MCH3383-TL-W
ON Semiconductor, P-Channel 12V 3.5A (Ta) 1W (Ta) Surface Mount SC-70FL/MCPH3,
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SI4401DDY-T1-GE3
Vishay Siliconix, P-Channel 40V 16.1A (Tc) 2.5W (Ta), 6.3W (Tc) Surface Mount 8-SO, TrenchFET®
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