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Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays
Datasheet PBSS4032SPN
Standard Package 1
Manufacturer Nexperia USA Inc.
Series -
Packaging Cut Tape (CT)
Part Status Active
Transistor Type NPN, PNP
Current - Collector (Ic) (Max) 5.7A, 4.8A
Voltage - Collector Emitter Breakdown (Max) 30V
Vce Saturation (Max) @ Ib, Ic 450mV @ 300mA, 6A / 510mV @ 250mA, 5A
Current - Collector Cutoff (Max) 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 2A, 2V / 150 @ 2A, 2V
Power - Max 2.3W
Frequency - Transition 140MHz, 115MHz
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SO
Base Part Number PBSS4032SPN
CMLT3946EG TR
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Nexperia USA Inc., Bipolar (BJT) Transistor Array NPN, PNP 40V 200mA 300MHz, 250MHz 350mW Surface Mount 6-TSSOP,
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Nexperia USA Inc., Bipolar (BJT) Transistor Array NPN, PNP 30V 5.7A, 4.8A 140MHz, 115MHz 2.3W Surface Mount 8-SO,
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ON Semiconductor, Bipolar (BJT) Transistor Array NPN, PNP 50V 500mA 500MHz 550mW Surface Mount 6-MCPH,
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ON Semiconductor, Bipolar (BJT) Transistor Array NPN, PNP 40V 3A 100MHz 653mW Surface Mount 8-SOIC,
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