PBSS4160PANP,115


PBSS4160PANP,115

Part NumberPBSS4160PANP,115

Manufacturer

Description

Datasheet

Package / Case6-UDFN Exposed Pad

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

PBSS4160PANP,115 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays
Datasheet
Standard Package1
ManufacturerNexperia USA Inc.
Series-
PackagingCut Tape (CT)
Part StatusActive
Transistor TypeNPN, PNP
Current - Collector (Ic) (Max)1A
Voltage - Collector Emitter Breakdown (Max)60V
Vce Saturation (Max) @ Ib, Ic120mV @ 50mA, 500mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce150 @ 500mA, 2V
Power - Max510mW
Frequency - Transition175MHz
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / Case6-UDFN Exposed Pad
Supplier Device Package6-HUSON-EP (2x2)
Base Part NumberPBSS4160

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PBSS4160PANP,115 - Tags

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