Home/Product Catalog/Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single/ PHE13009,127

PHE13009,127

PHE13009,127

Part NumberPHE13009,127

ManufacturerWeEn Semiconductors

DescriptionTRANS NPN 400V 12A TO220AB

DatasheetPHE13009

Package / CaseTO-220-3

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Lead TimeTo be Confirmed

Detailed DescriptionBipolar (BJT) Transistor NPN 400V 12A 80W Through Hole TO-220AB

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PHE13009,127 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet	PHE13009
Standard Package	1000
Manufacturer	WeEn Semiconductors
Series	-
Packaging	Tube
Part Status	Active
Transistor Type	NPN
Current - Collector (Ic) (Max)	12A
Voltage - Collector Emitter Breakdown (Max)	400V
Vce Saturation (Max) @ Ib, Ic	2V @ 1.6A, 8A
Current - Collector Cutoff (Max)	100µA
DC Current Gain (hFE) (Min) @ Ic, Vce	8 @ 5A, 5V
Power - Max	80W
Frequency - Transition	-
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-220-3
Supplier Device Package	TO-220AB

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