PHT6NQ10T,135
PHT6NQ10T,135
Part Number PHT6NQ10T,135
Description MOSFET N-CH 100V 3A SOT223
Package / Case TO-261-4, TO-261AA
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 100V 3A (Ta) 1.8W (Ta), 8.3W (Tc) Surface Mount SC-73
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PHT6NQ10T,135 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet PHT6NQ10T
Standard Package 1
Manufacturer Nexperia USA Inc.
Series TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 90mOhm @ 3A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 21nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 633pF @ 25V
FET Feature -
Power Dissipation (Max) 1.8W (Ta), 8.3W (Tc)
Operating Temperature -65°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SC-73
Package / Case TO-261-4, TO-261AA
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