Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIHU6N80E-GE3

SIHU6N80E-GE3

SIHU6N80E-GE3

Part NumberSIHU6N80E-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CHAN 800V TO-251

DatasheetSIHU6N80E

Package / CaseTO-251-3 Long Leads, IPak, TO-251AB

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 800V 5.4A (Tc) 78W (Tc) Through Hole IPAK (TO-251)

To learn about the specification of SIHU6N80E-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIHU6N80E-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIHU6N80E-GE3.
We are offering SIHU6N80E-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIHU6N80E-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIHU6N80E
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	E
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25°C	5.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	940mOhm @ 3A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	44nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	827pF @ 100V
FET Feature	-
Power Dissipation (Max)	78W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	IPAK (TO-251)
Package / Case	TO-251-3 Long Leads, IPak, TO-251AB

SIHU6N80E-GE3 - Related Products

	R5009FNJTL	Rohm Semiconductor, N-Channel 500V 9A (Tc) 50W (Tc) Surface Mount LPTS,	View
	IRFS3307TRLPBF	Infineon Technologies, N-Channel 75V 120A (Tc) 200W (Tc) Surface Mount D2PAK, HEXFET®	View
	STB33N60M2	STMicroelectronics, N-Channel 600V 26A (Tc) 190W (Tc) Surface Mount D2PAK, MDmesh™ II Plus	View
	TN5325N8-G	Microchip Technology, N-Channel 250V 316mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89),	View
	TPH11003NL,LQ	Toshiba Semiconductor and Storage, N-Channel 30V 32A (Ta) 1.6W (Ta), 21W (Tc) Surface Mount 8-SOP Advance (5x5), U-MOSVIII-H	View
	STH290N4F6-6AG	STMicroelectronics, N-Channel 40V 180A (Tc) 300W (Tc) Surface Mount H2PAK-6, Automotive, AEC-Q101, STripFET™	View
	IRLL024NTRPBF	Infineon Technologies, N-Channel 55V 3.1A (Ta) 1W (Ta) Surface Mount SOT-223, HEXFET®	View
	IRFS4410ZTRLPBF	Infineon Technologies, N-Channel 100V 97A (Tc) 230W (Tc) Surface Mount D2PAK, HEXFET®	View
	CWDM3011N TR13	Central Semiconductor Corp, N-Channel 30V 11A (Ta) 2.5W (Ta) Surface Mount 8-SOIC,	View
	NTTFS4930NTAG	ON Semiconductor, N-Channel 30V 4.5A (Ta), 23A (Tc) 790mW (Ta), 20.2W (Tc) Surface Mount 8-WDFN (3.3x3.3),	View
	IPC100N04S5L1R9ATMA1	Infineon Technologies, N-Channel 40V 100A (Tc) 100W (Tc) Surface Mount PG-TDSON-8-34, OptiMOS™	View
	TK20V60W5,LVQ	Toshiba Semiconductor and Storage, N-Channel 600V 20A (Ta) 156W (Tc) Surface Mount 4-DFN-EP (8x8), DTMOSIV	View

SIHU6N80E-GE3 - Tags

SIHU6N80E-GE3 SIHU6N80E-GE3 PDF SIHU6N80E-GE3 datasheet SIHU6N80E-GE3 specification SIHU6N80E-GE3 image SIHU6N80E-GE3 India Renesas Electronics India SIHU6N80E-GE3 buy SIHU6N80E-GE3 SIHU6N80E-GE3 price SIHU6N80E-GE3 distributor SIHU6N80E-GE3 supplier SIHU6N80E-GE3 wholesales