Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIHU6N80E-GE3

SIHU6N80E-GE3

SIHU6N80E-GE3

Part NumberSIHU6N80E-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CHAN 800V TO-251

DatasheetSIHU6N80E

Package / CaseTO-251-3 Long Leads, IPak, TO-251AB

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 800V 5.4A (Tc) 78W (Tc) Through Hole IPAK (TO-251)

To learn about the specification of SIHU6N80E-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIHU6N80E-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIHU6N80E-GE3.
We are offering SIHU6N80E-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIHU6N80E-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIHU6N80E
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	E
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25°C	5.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	940mOhm @ 3A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	44nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	827pF @ 100V
FET Feature	-
Power Dissipation (Max)	78W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	IPAK (TO-251)
Package / Case	TO-251-3 Long Leads, IPak, TO-251AB

SIHU6N80E-GE3 - Related Products

	FQT4N20LTF	ON Semiconductor, N-Channel 200V 850mA (Tc) 2.2W (Tc) Surface Mount SOT-223-4, QFET®	View
	NDP7060	ON Semiconductor, N-Channel 60V 75A (Tc) 150W (Tc) Through Hole TO-220-3,	View
	SK8603160L	Panasonic Electronic Components, N-Channel 30V 22A (Ta), 70A (Tc) 2.8W (Ta), 28W (Tc) Surface Mount HSO8-F4-B,	View
	FQB11N40CTM	ON Semiconductor, N-Channel 400V 10.5A (Tc) 135W (Tc) Surface Mount D²PAK (TO-263AB), QFET®	View
	PMV37EN2R	Nexperia USA Inc., N-Channel 30V 4.5A (Ta) 510mW (Ta), 5W (Tc) Surface Mount TO-236AB,	View
	IPA60R125P6XKSA1	Infineon Technologies, N-Channel 600V 30A (Tc) 34W (Tc) Through Hole PG-TO220-FP, CoolMOS™ P6	View
	FDS8690	ON Semiconductor, N-Channel 30V 14A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®	View
	FCP16N60N	ON Semiconductor, N-Channel 600V 16A (Tc) 134.4W (Tc) Through Hole TO-220-3, SupreMOS™	View
	FCMT299N60	ON Semiconductor, N-Channel 600V 12A (Ta) 125W (Tc) Surface Mount Power88, SuperFET® II	View
	IPL60R105P7AUMA1	Infineon Technologies, N-Channel 650V 33A (Tc) 137W (Tc) Surface Mount PG-VSON-4, CoolMOS™ P7	View
	IXFH16N50P	IXYS, N-Channel 500V 16A (Tc) 300W (Tc) Through Hole TO-247AD (IXFH), HiPerFET™, PolarHT™	View
	SIS106DN-T1-GE3	Vishay Siliconix, N-Channel 60V 9.8A (Ta), 16A (Tc) 3.2W (Ta), 24W (Tc) Surface Mount PowerPAK® 1212-8S (3.3x3.3), TrenchFET® Gen IV	View

SIHU6N80E-GE3 - Tags

SIHU6N80E-GE3 SIHU6N80E-GE3 PDF SIHU6N80E-GE3 datasheet SIHU6N80E-GE3 specification SIHU6N80E-GE3 image SIHU6N80E-GE3 India Renesas Electronics India SIHU6N80E-GE3 buy SIHU6N80E-GE3 SIHU6N80E-GE3 price SIHU6N80E-GE3 distributor SIHU6N80E-GE3 supplier SIHU6N80E-GE3 wholesales