Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	PMBF170
Standard Package	10000
Manufacturer	Nexperia USA Inc.
Series	TrenchMOS™
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id	2V @ 1mA
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	40pF @ 10V
FET Feature	-
Power Dissipation (Max)	830mW (Tc)
Operating Temperature	-65°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-236AB
Package / Case	TO-236-3, SC-59, SOT-23-3

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SUM40010EL-GE3	Vishay Siliconix, N-Channel 40V 120A (Tc) 375W (Tc) Surface Mount D²PAK (TO-263), ThunderFET®	View
DMG4800LK3-13	Diodes Incorporated, N-Channel 30V 10A (Ta) 1.71W (Ta) Surface Mount TO-252-3,	View
IRFP4868PBF	Infineon Technologies, N-Channel 300V 70A (Tc) 517W (Tc) Through Hole TO-247AC,	View
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IXTP1R6N50D2	IXYS, N-Channel 500V 1.6A (Tc) 100W (Tc) Through Hole TO-220AB,	View
SI1012R-T1-GE3	Vishay Siliconix, N-Channel 20V 500mA (Ta) 150mW (Ta) Surface Mount SC-75A, TrenchFET®	View
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PMBF170,235

Part NumberPMBF170,235