Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	PMV65XP
Standard Package	1
Manufacturer	Nexperia USA Inc.
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	2.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	74mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id	900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	7.7nC @ 4.5V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	744pF @ 20V
FET Feature	-
Power Dissipation (Max)	480mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-236AB
Package / Case	TO-236-3, SC-59, SOT-23-3

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SI2301BDS-T1-GE3	Vishay Siliconix, P-Channel 20V 2.2A (Ta) 700mW (Ta) Surface Mount SOT-23-3 (TO-236), TrenchFET®	View
IXTK40P50P	IXYS, P-Channel 500V 40A (Tc) 890W (Tc) Through Hole TO-264 (IXTK), PolarP™	View
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PMV65XP,215

Part NumberPMV65XP,215