PMXB360ENEAZ
PMXB360ENEAZ
Part Number PMXB360ENEAZ
Description MOSFET N-CH 80V 1.1A 3DFN
Package / Case 3-XDFN Exposed Pad
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 80V 1.1A (Ta) 400mW (Ta), 6.25W (Tc) Surface Mount DFN1010D-3
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PMXB360ENEAZ - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet PMXB360ENEA
Standard Package 1
Manufacturer Nexperia USA Inc.
Series -
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80V
Current - Continuous Drain (Id) @ 25°C 1.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 450mOhm @ 1.1A, 10V
Vgs(th) (Max) @ Id 2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 4.5nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 130pF @ 40V
FET Feature -
Power Dissipation (Max) 400mW (Ta), 6.25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DFN1010D-3
Package / Case 3-XDFN Exposed Pad
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