Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI2316BDS-T1-E3

SI2316BDS-T1-E3

SI2316BDS-T1-E3

Part NumberSI2316BDS-T1-E3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 30V 4.5A SOT-23

DatasheetSI2316BDS

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 4.5A (Tc) 1.25W (Ta), 1.66W (Tc) Surface Mount SOT-23-3 (TO-236)

To learn about the specification of SI2316BDS-T1-E3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2316BDS-T1-E3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2316BDS-T1-E3.
We are offering SI2316BDS-T1-E3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI2316BDS-T1-E3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI2316BDS
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	50mOhm @ 3.9A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	9.6nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	350pF @ 15V
FET Feature	-
Power Dissipation (Max)	1.25W (Ta), 1.66W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3

SI2316BDS-T1-E3 - Related Products

	FDT86113LZ	ON Semiconductor, N-Channel 100V 3.3A (Tc) 2.2W (Ta) Surface Mount SOT-223-4, PowerTrench®	View
	PMXB65ENEZ	Nexperia USA Inc., N-Channel 30V 3.2A (Ta) 400mW (Ta), 8.33W (Tc) Surface Mount DFN1010D-3,	View
	IRFH8318TRPBF	Infineon Technologies, N-Channel 30V 27A (Ta), 120A (Tc) 3.6W (Ta), 59W (Tc) Surface Mount PQFN (5x6), HEXFET®	View
	IPD60R360P7SAUMA1	Infineon Technologies, N-Channel 600V 9A (Tc) 41W (Tc) Surface Mount PG-TO252-3, CoolMOS™ P7	View
	NTD24N06T4G	ON Semiconductor, N-Channel 60V 24A (Ta) 1.36W (Ta), 62.5W (Tj) Surface Mount DPAK,	View
	STD95N4F3	STMicroelectronics, N-Channel 40V 80A (Tc) 110W (Tc) Surface Mount DPAK, STripFET™ III	View
	STD3N62K3	STMicroelectronics, N-Channel 620V 2.7A (Tc) 45W (Tc) Surface Mount DPAK, SuperMESH3™	View
	SI4430BDY-T1-E3	Vishay Siliconix, N-Channel 30V 14A (Ta) 1.6W (Ta) Surface Mount 8-SO, TrenchFET®	View
	QS5U17TR	Rohm Semiconductor, N-Channel 30V 2A (Ta) 900mW (Ta) Surface Mount TSMT5,	View
	APT31M100L	Microsemi Corporation, N-Channel 1000V 32A (Tc) 1040W (Tc) Through Hole TO-264, POWER MOS 8™	View
	STD5N95K3	STMicroelectronics, N-Channel 950V 4A (Tc) 90W (Tc) Surface Mount DPAK, SuperMESH3™	View
	SIHA25N60EFL-E3	Vishay Siliconix, N-Channel 600V 25A (Tc) 39W (Tc) Through Hole TO-220 Full Pack,	View

SI2316BDS-T1-E3 - Tags

SI2316BDS-T1-E3 SI2316BDS-T1-E3 PDF SI2316BDS-T1-E3 datasheet SI2316BDS-T1-E3 specification SI2316BDS-T1-E3 image SI2316BDS-T1-E3 India Renesas Electronics India SI2316BDS-T1-E3 buy SI2316BDS-T1-E3 SI2316BDS-T1-E3 price SI2316BDS-T1-E3 distributor SI2316BDS-T1-E3 supplier SI2316BDS-T1-E3 wholesales