Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI2316BDS-T1-E3

SI2316BDS-T1-E3

SI2316BDS-T1-E3

Part NumberSI2316BDS-T1-E3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 30V 4.5A SOT-23

DatasheetSI2316BDS

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 4.5A (Tc) 1.25W (Ta), 1.66W (Tc) Surface Mount SOT-23-3 (TO-236)

To learn about the specification of SI2316BDS-T1-E3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2316BDS-T1-E3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2316BDS-T1-E3.
We are offering SI2316BDS-T1-E3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI2316BDS-T1-E3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI2316BDS
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	50mOhm @ 3.9A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	9.6nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	350pF @ 15V
FET Feature	-
Power Dissipation (Max)	1.25W (Ta), 1.66W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3

SI2316BDS-T1-E3 - Related Products

	STP20NF20	STMicroelectronics, N-Channel 200V 18A (Tc) 110W (Tc) Through Hole TO-220AB, STripFET™	View
	STP80NF70	STMicroelectronics, N-Channel 68V 98A (Tc) 190W (Tc) Through Hole TO-220AB, STripFET™ II	View
	AON6558	Alpha & Omega Semiconductor Inc., N-Channel 30V 25A (Ta), 28A (Tc) 5W (Ta), 24W (Tc) Surface Mount 8-DFN (5x6), AlphaMOS	View
	ZVN4206AVSTZ	Diodes Incorporated, N-Channel 60V 600mA (Ta) 700mW (Ta) Through Hole E-Line (TO-92 compatible),	View
	BUK7214-75B,118	Nexperia USA Inc., N-Channel 75V 70A (Tc) 158W (Tc) Surface Mount DPAK, Automotive, AEC-Q101, TrenchMOS™	View
	SI8806DB-T2-E1	Vishay Siliconix, N-Channel 12V 500mW (Ta) Surface Mount 4-Microfoot, TrenchFET®	View
	SI2304BDS-T1-GE3	Vishay Siliconix, N-Channel 30V 2.6A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236), TrenchFET®	View
	FDP8874	ON Semiconductor, N-Channel 30V 16A (Ta), 114A (Tc) 110W (Tc) Through Hole TO-220-3, PowerTrench®	View
	BSS225H6327FTSA1	Infineon Technologies, N-Channel 600V 90mA (Ta) 1W (Ta) Surface Mount PG-SOT89, SIPMOS®	View
	ZXMN3A01FTA	Diodes Incorporated, N-Channel 30V 1.8A (Ta) 625mW (Ta) Surface Mount SOT-23-3,	View
	FCH040N65S3-F155	ON Semiconductor, N-Channel 650V 65A (Tc) 417W (Tc) Through Hole TO-247-3, SuperFET® III	View
	FQN1N50CTA	ON Semiconductor, N-Channel 500V 380mA (Tc) 890mW (Ta), 2.08W (Tc) Through Hole TO-92-3, QFET®	View

SI2316BDS-T1-E3 - Tags

SI2316BDS-T1-E3 SI2316BDS-T1-E3 PDF SI2316BDS-T1-E3 datasheet SI2316BDS-T1-E3 specification SI2316BDS-T1-E3 image SI2316BDS-T1-E3 India Renesas Electronics India SI2316BDS-T1-E3 buy SI2316BDS-T1-E3 SI2316BDS-T1-E3 price SI2316BDS-T1-E3 distributor SI2316BDS-T1-E3 supplier SI2316BDS-T1-E3 wholesales