Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI2316BDS-T1-E3

SI2316BDS-T1-E3

SI2316BDS-T1-E3

Part NumberSI2316BDS-T1-E3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 30V 4.5A SOT-23

DatasheetSI2316BDS

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 4.5A (Tc) 1.25W (Ta), 1.66W (Tc) Surface Mount SOT-23-3 (TO-236)

To learn about the specification of SI2316BDS-T1-E3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2316BDS-T1-E3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2316BDS-T1-E3.
We are offering SI2316BDS-T1-E3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI2316BDS-T1-E3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI2316BDS
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	50mOhm @ 3.9A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	9.6nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	350pF @ 15V
FET Feature	-
Power Dissipation (Max)	1.25W (Ta), 1.66W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3

SI2316BDS-T1-E3 - Related Products

	TSM090N03CP ROG	Taiwan Semiconductor Corporation, N-Channel 30V 50A (Tc) 40W (Tc) Surface Mount TO-252, (D-Pak),	View
	FDMC8360L	ON Semiconductor, N-Channel 40V 27A (Ta), 80A (Tc) 2.3W (Ta), 54W (Tc) Surface Mount Power33, PowerTrench®	View
	IRF540STRRPBF	Vishay Siliconix, N-Channel 100V 28A (Tc) 3.7W (Ta), 150W (Tc) Surface Mount D²PAK (TO-263),	View
	PSMN059-150Y,115	Nexperia USA Inc., N-Channel 150V 43A (Tc) 113W (Tc) Surface Mount LFPAK56, Power-SO8,	View
	IRFHM8329TRPBF	Infineon Technologies, N-Channel 30V 16A (Ta), 57A (Tc) 2.6W (Ta), 33W (Tc) Surface Mount PQFN (3x3), HEXFET®	View
	FDD86581-F085	ON Semiconductor, N-Channel 60V 25A (Tc) 48.4W (Tj) Surface Mount D-PAK (TO-252),	View
	IRFR4105ZTRPBF	Infineon Technologies, N-Channel 55V 30A (Tc) 48W (Tc) Surface Mount D-Pak, HEXFET®	View
	IPSA70R1K2P7SAKMA1	Infineon Technologies, N-Channel 700V 4.5A (Tc) 25W (Tc) Through Hole PG-TO251-3, CoolMOS™ P7	View
	BUK965R4-40E,118	Nexperia USA Inc., N-Channel 40V 75A (Tc) 137W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™	View
	IRFS4310ZTRLPBF	Infineon Technologies, N-Channel 100V 120A (Tc) 250W (Tc) Surface Mount D2PAK, HEXFET®	View
	PSMN4R3-30PL,127	Nexperia USA Inc., N-Channel 30V 100A (Tc) 103W (Tc) Through Hole TO-220AB,	View
	SIHG25N60EFL-GE3	Vishay Siliconix, N-Channel 600V 25A (Tc) 250W (Tc) Through Hole TO-247AC,	View

SI2316BDS-T1-E3 - Tags

SI2316BDS-T1-E3 SI2316BDS-T1-E3 PDF SI2316BDS-T1-E3 datasheet SI2316BDS-T1-E3 specification SI2316BDS-T1-E3 image SI2316BDS-T1-E3 India Renesas Electronics India SI2316BDS-T1-E3 buy SI2316BDS-T1-E3 SI2316BDS-T1-E3 price SI2316BDS-T1-E3 distributor SI2316BDS-T1-E3 supplier SI2316BDS-T1-E3 wholesales