Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	PSMN012-60YS
Standard Package	1500
Manufacturer	Nexperia USA Inc.
Series	-
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	59A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	11.1mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	28.4nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1685pF @ 30V
FET Feature	-
Power Dissipation (Max)	89W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	LFPAK56, Power-SO8
Package / Case	SC-100, SOT-669

IRFRC20TRLPBF	Vishay Siliconix, N-Channel 600V 2A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-Pak,	View
IXFK160N30T	IXYS, N-Channel 300V 160A (Tc) 1390W (Tc) Through Hole TO-264AA (IXFK), GigaMOS™	View
EKI04036	Sanken, N-Channel 40V 80A (Tc) 116W (Tc) Through Hole TO-220-3,	View
IRFR224TRPBF	Vishay Siliconix, N-Channel 250V 3.8A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-Pak,	View
IGLD60R070D1AUMA1	Infineon Technologies, N-Channel 600V 15A (Tc) 114W (Tc) Surface Mount PG-LSON-8-1, CoolGaN™	View
IXTQ180N10T	IXYS, N-Channel 100V 180A (Tc) 480W (Tc) Through Hole TO-3P, TrenchMV™	View
IPW60R070P6XKSA1	Infineon Technologies, N-Channel 600V 53.5A (Tc) 391W (Tc) Through Hole PG-TO247-3, CoolMOS™ P6	View
IPD70R600P7SAUMA1	Infineon Technologies, N-Channel 700V 8.5A (Tc) 43W (Tc) Surface Mount PG-TO252-3, CoolMOS™ P7	View
DN2540N5-G	Microchip Technology, N-Channel 400V 500mA (Tj) 15W (Tc) Through Hole TO-220-3,	View
ZXMN6A08GTA	Diodes Incorporated, N-Channel 60V 3.8A (Ta) 2W (Ta) Surface Mount SOT-223,	View
SI2302CDS-T1-E3	Vishay Siliconix, N-Channel 20V 2.6A (Ta) 710mW (Ta) Surface Mount SOT-23-3 (TO-236), TrenchFET®	View
SSM3K347R,LF	Toshiba Semiconductor and Storage, N-Channel 38V 2A (Ta) 2W (Ta) Surface Mount SOT-23F, U-MOSIV	View

PSMN012-60YS,115

Part NumberPSMN012-60YS,115