Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIS780DN-T1-GE3

SIS780DN-T1-GE3

SIS780DN-T1-GE3

Part NumberSIS780DN-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 30V 18A POWERPAK1212

DatasheetSIS780DN

Package / CasePowerPAK® 1212-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 18A (Tc) 27.7W (Tc) Surface Mount PowerPAK® 1212-8

To learn about the specification of SIS780DN-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIS780DN-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIS780DN-T1-GE3.
We are offering SIS780DN-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIS780DN-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIS780DN
Standard Package	1
Manufacturer	Vishay Siliconix
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	13.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	24.5nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	722pF @ 15V
FET Feature	Schottky Diode (Body)
Power Dissipation (Max)	27.7W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8
Package / Case	PowerPAK® 1212-8

SIS780DN-T1-GE3 - Related Products

	IPN60R600P7SATMA1	Infineon Technologies, N-Channel 600V 6A (Tc) 7W (Tc) Surface Mount PG-SOT223, CoolMOS™ P7	View
	SQM200N04-1M1L_GE3	Vishay Siliconix, N-Channel 40V 200A (Tc) 375W (Tc) Surface Mount TO-263-7, TrenchFET®	View
	SI4090DY-T1-GE3	Vishay Siliconix, N-Channel 100V 19.7A (Tc) 3.5W (Ta), 7.8W (Tc) Surface Mount 8-SO, TrenchFET®	View
	BUK7Y4R8-60EX	Nexperia USA Inc., N-Channel 60V 100A (Tc) 238W (Tc) Surface Mount LFPAK56, Power-SO8, TrenchMOS™	View
	FDB2572	ON Semiconductor, N-Channel 150V 4A (Ta), 29A (Tc) 135W (Tc) Surface Mount TO-263AB, PowerTrench®	View
	IRFSL4410ZPBF	Infineon Technologies, N-Channel 100V 97A (Tc) 230W (Tc) Through Hole TO-262, HEXFET®	View
	ZVN4310A	Diodes Incorporated, N-Channel 100V 900mA (Ta) 850mW (Ta) Through Hole TO-92-3,	View
	FQPF8N80CYDTU	ON Semiconductor, N-Channel 800V 8A (Tc) 59W (Tc) Through Hole TO-220F-3 (Y-Forming), QFET®	View
	BSS127SSN-7	Diodes Incorporated, N-Channel 600V 50mA (Ta) 610mW (Ta) Surface Mount SC-59,	View
	CSD16410Q5A	Texas Instruments, N-Channel 25V 16A (Ta), 59A (Tc) 3W (Ta) Surface Mount 8-VSONP (5x6), NexFET™	View
	IPP020N06NAKSA1	Infineon Technologies, N-Channel 60V 29A (Ta), 120A (Tc) 3W (Ta), 214W (Tc) Through Hole PG-TO220-3, OptiMOS™	View
	TPHR9003NL,L1Q	Toshiba Semiconductor and Storage, N-Channel 30V 60A (Tc) 1.6W (Ta), 78W (Tc) Surface Mount 8-SOP Advance (5x5), U-MOSVIII-H	View

SIS780DN-T1-GE3 - Tags

SIS780DN-T1-GE3 SIS780DN-T1-GE3 PDF SIS780DN-T1-GE3 datasheet SIS780DN-T1-GE3 specification SIS780DN-T1-GE3 image SIS780DN-T1-GE3 India Renesas Electronics India SIS780DN-T1-GE3 buy SIS780DN-T1-GE3 SIS780DN-T1-GE3 price SIS780DN-T1-GE3 distributor SIS780DN-T1-GE3 supplier SIS780DN-T1-GE3 wholesales