PSMN102-200Y,115
PSMN102-200Y,115
Part Number PSMN102-200Y,115 Description MOSFET N-CH 200V 21.5A LFPAK Package / Case SC-100, SOT-669Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 200V 21.5A (Tc) 113W (Tc) Surface Mount LFPAK56, Power-SO8
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PSMN102-200Y,115 - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet PSMN102-200Y Standard Package 1 Manufacturer Nexperia USA Inc. Series TrenchMOS™ Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 21.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 102mOhm @ 12A, 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 30.7nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1568pF @ 30V FET Feature - Power Dissipation (Max) 113W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package LFPAK56, Power-SO8 Package / Case SC-100, SOT-669
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