PSMN102-200Y,115
PSMN102-200Y,115
Part Number PSMN102-200Y,115
Description MOSFET N-CH 200V 21.5A LFPAK
Package / Case SC-100, SOT-669
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 200V 21.5A (Tc) 113W (Tc) Surface Mount LFPAK56, Power-SO8
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PSMN102-200Y,115 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet PSMN102-200Y
Standard Package 1
Manufacturer Nexperia USA Inc.
Series TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 21.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 102mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 30.7nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1568pF @ 30V
FET Feature -
Power Dissipation (Max) 113W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package LFPAK56, Power-SO8
Package / Case SC-100, SOT-669
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