PSMN4R3-100ES,127
PSMN4R3-100ES,127
Part Number PSMN4R3-100ES,127
Description MOSFET N-CH 100V 120A I2PAK
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 100V 120A (Tc) 338W (Tc) Through Hole I2PAK
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PSMN4R3-100ES,127 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet PSMN4R3-100ES
Standard Package 50
Manufacturer Nexperia USA Inc.
Series -
Packaging Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.3mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 170nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 9900pF @ 50V
FET Feature -
Power Dissipation (Max) 338W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package I2PAK
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
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