R6007JND3TL1
R6007JND3TL1
Part Number R6007JND3TL1 Description R6007JND3 IS A POWER MOSFET WITH Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 600V 7A (Tc) 96W (Tc) Surface Mount TO-252
To learn about the specification of R6007JND3TL1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add R6007JND3TL1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of R6007JND3TL1.
We are offering R6007JND3TL1 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
R6007JND3TL1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet R6007JND3 Standard Package 1 Manufacturer Rohm Semiconductor Series - Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 7A (Tc) Drive Voltage (Max Rds On, Min Rds On) 15V Rds On (Max) @ Id, Vgs 780mOhm @ 3.5A, 15V Vgs(th) (Max) @ Id 7V @ 1mA Gate Charge (Qg) (Max) @ Vgs 17.5nC @ 15V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 475pF @ 100V FET Feature - Power Dissipation (Max) 96W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-252 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
R6007JND3TL1 - Related ProductsMore >>
FQPF630 ON Semiconductor, N-Channel 200V 6.3A (Tc) 38W (Tc) Through Hole TO-220F, QFET®
View
TK20N60W5,S1VF Toshiba Semiconductor and Storage, N-Channel 600V 20A (Ta) 165W (Tc) Through Hole TO-247, DTMOSIV
View
FDC8884 ON Semiconductor, N-Channel 30V 6.5A (Ta), 8A (Tc) 1.6W (Ta) Surface Mount SuperSOT™-6, PowerTrench®
View
STD5NM60-1 STMicroelectronics, N-Channel 600V 5A (Tc) 96W (Tc) Through Hole I-PAK, MDmesh™
View
APT40N60JCU2 Microsemi Corporation, N-Channel 600V 40A (Tc) 290W (Tc) Chassis Mount SOT-227,
View
IPD30N03S4L09ATMA1 Infineon Technologies, N-Channel 30V 30A (Tc) 42W (Tc) Surface Mount PG-TO252-3, OptiMOS™
View
DMN2300U-7 Diodes Incorporated, N-Channel 20V 1.24A (Ta) 430mW (Ta) Surface Mount SOT-23,
View
NTMFS5C646NLT1G ON Semiconductor, N-Channel 60V 19A (Ta) 3.7W (Ta), 79W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL),
View
CSD13380F3 Texas Instruments, N-Channel 12V 3.6A (Ta) 500mW (Ta) Surface Mount 3-PICOSTAR, FemtoFET™
View
IXFN210N20P IXYS, N-Channel 200V 188A (Tc) 1070W (Tc) Chassis Mount SOT-227B, HiPerFET™
View
STD16NF25 STMicroelectronics, N-Channel 250V 14A (Tc) 100W (Tc) Surface Mount DPAK, STripFET™ II
View
IXFQ60N25X3 IXYS, N-Channel 250V 60A (Tc) 320W (Tc) Through Hole TO-3P, HiPerFET™
View
R6007JND3TL1 - Tags
English
