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R6020KNZ1C9

R6020KNZ1C9

Part NumberR6020KNZ1C9

ManufacturerRohm Semiconductor

DescriptionNCH 600V 20A POWER MOSFET

DatasheetR6020KNZ1

Package / CaseTO-247-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 20A (Tc) 231W (Tc) Through Hole TO-247

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R6020KNZ1C9 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	R6020KNZ1
Standard Package	30
Manufacturer	Rohm Semiconductor
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	196mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id	5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	40nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1550pF @ 25V
FET Feature	-
Power Dissipation (Max)	231W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247
Package / Case	TO-247-3

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