Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ R6030ENZ1C9

R6030ENZ1C9

R6030ENZ1C9

Part NumberR6030ENZ1C9

ManufacturerRohm Semiconductor

DescriptionMOSFET N-CH 600V 30A TO247

DatasheetR6030ENZ1

Package / CaseTO-247-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 30A (Tc) 120W (Tc) Through Hole TO-247

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R6030ENZ1C9 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	R6030ENZ1
Standard Package	450
Manufacturer	Rohm Semiconductor
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	130mOhm @ 14.5A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	85nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2100pF @ 25V
FET Feature	-
Power Dissipation (Max)	120W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247
Package / Case	TO-247-3

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R6030ENZ1C9 - Tags

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