R6076MNZ1C9
R6076MNZ1C9
Part Number R6076MNZ1C9 Description MOSFET N-CHANNEL 600V 76A TO247 Package / Case TO-247-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 600V 76A (Tc) 740W (Tc) Through Hole TO-247
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R6076MNZ1C9 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet R6076MNZ1 Standard Package 450 Manufacturer Rohm Semiconductor Series - Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 76A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 55mOhm @ 38A, 10V Vgs(th) (Max) @ Id 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 115nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 7000pF @ 25V FET Feature - Power Dissipation (Max) 740W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247 Package / Case TO-247-3
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