Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIHJ10N60E-T1-GE3

SIHJ10N60E-T1-GE3

SIHJ10N60E-T1-GE3

Part NumberSIHJ10N60E-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 600V 10A POWERPAKSO

DatasheetSIHJ10N60E

Package / Case8-PowerTDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 10A (Tc) 89W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SIHJ10N60E-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIHJ10N60E-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIHJ10N60E-T1-GE3.
We are offering SIHJ10N60E-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIHJ10N60E-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIHJ10N60E
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	E
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	360mOhm @ 5A, 10V
Vgs(th) (Max) @ Id	4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	50nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	784pF @ 100V
FET Feature	-
Power Dissipation (Max)	89W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	8-PowerTDFN

SIHJ10N60E-T1-GE3 - Related Products

	IXTH1N200P3HV	IXYS, N-Channel 2000V 1A (Tc) 125W (Tc) Through Hole TO-247HV,	View
	SSM3K318R,LF	Toshiba Semiconductor and Storage, N-Channel 60V 2.5A (Ta) 1W (Ta) Surface Mount SOT-23F, U-MOSIV	View
	BUK7610-55AL,118	Nexperia USA Inc., N-Channel 55V 75A (Tc) 300W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™	View
	CSD17577Q3AT	Texas Instruments, N-Channel 30V 35A (Ta) 2.8W (Ta), 53W (Tc) Surface Mount 8-VSONP (3x3.15), NexFET™	View
	DMN2300UFB4-7B	Diodes Incorporated, N-Channel 20V 1.3A (Ta) 500mW (Ta) Surface Mount X2-DFN1006-3,	View
	STF9N60M2	STMicroelectronics, N-Channel 600V 5.5A (Tc) 20W (Tc) Through Hole TO-220FP, MDmesh™ II Plus	View
	IRF7413ZTRPBF	Infineon Technologies, N-Channel 30V 13A (Ta) 2.5W (Ta) Surface Mount 8-SO, HEXFET®	View
	SIS184DN-T1-GE3	Vishay Siliconix, N-Channel 60V 17.4A (Ta), 65.3A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8S, TrenchFET® Gen IV	View
	IRL2505STRLPBF	Infineon Technologies, N-Channel 55V 104A (Tc) 3.8W (Ta), 200W (Tc) Surface Mount D2PAK, HEXFET®	View
	SI7386DP-T1-GE3	Vishay Siliconix, N-Channel 30V 12A (Ta) 1.8W (Ta) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	BSZ088N03LSGATMA1	Infineon Technologies, N-Channel 30V 12A (Ta), 40A (Tc) 2.1W (Ta), 35W (Tc) Surface Mount PG-TSDSON-8, OptiMOS™	View
	BUK6D43-60EX	Nexperia USA Inc., N-Channel 60V 5A (Ta) 15W (Tc) Surface Mount DFN2020MD-6, Automotive, AEC-Q101	View

SIHJ10N60E-T1-GE3 - Tags

SIHJ10N60E-T1-GE3 SIHJ10N60E-T1-GE3 PDF SIHJ10N60E-T1-GE3 datasheet SIHJ10N60E-T1-GE3 specification SIHJ10N60E-T1-GE3 image SIHJ10N60E-T1-GE3 India Renesas Electronics India SIHJ10N60E-T1-GE3 buy SIHJ10N60E-T1-GE3 SIHJ10N60E-T1-GE3 price SIHJ10N60E-T1-GE3 distributor SIHJ10N60E-T1-GE3 supplier SIHJ10N60E-T1-GE3 wholesales