Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIHJ10N60E-T1-GE3

SIHJ10N60E-T1-GE3

SIHJ10N60E-T1-GE3

Part NumberSIHJ10N60E-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 600V 10A POWERPAKSO

DatasheetSIHJ10N60E

Package / Case8-PowerTDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 10A (Tc) 89W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SIHJ10N60E-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIHJ10N60E-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIHJ10N60E-T1-GE3.
We are offering SIHJ10N60E-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIHJ10N60E-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIHJ10N60E
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	E
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	360mOhm @ 5A, 10V
Vgs(th) (Max) @ Id	4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	50nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	784pF @ 100V
FET Feature	-
Power Dissipation (Max)	89W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	8-PowerTDFN

SIHJ10N60E-T1-GE3 - Related Products

	IXTA130N15X4	IXYS, N-Channel 150V 130A (Tc) 400W (Tc) Surface Mount TO-263AA,	View
	PMV28UNEAR	Nexperia USA Inc., N-Channel 20V 4.7A (Ta) 510mW (Ta), 3.9W (Tc) Surface Mount TO-236AB, Automotive, AEC-Q101	View
	IRF6662TRPBF	Infineon Technologies, N-Channel 100V 8.3A (Ta), 47A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MZ, HEXFET®	View
	IPN60R360P7SATMA1	Infineon Technologies, N-Channel 600V 9A (Tc) 7W (Tc) Surface Mount PG-SOT223, CoolMOS™ P7	View
	PSMN022-30BL,118	Nexperia USA Inc., N-Channel 30V 30A (Tc) 41W (Tc) Surface Mount D2PAK,	View
	APT13F120B	Microsemi Corporation, N-Channel 1200V 14A (Tc) 625W (Tc) Through Hole TO-247 [B],	View
	VN2222LL-G	Microchip Technology, N-Channel 60V 230mA (Tj) 400mW (Ta), 1W (Tc) Through Hole TO-92-3,	View
	IRFI740GPBF	Vishay Siliconix, N-Channel 400V 5.4A (Tc) 40W (Tc) Through Hole TO-220-3,	View
	SQJA92EP-T1_GE3	Vishay Siliconix, N-Channel 80V 57A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8, Automotive, AEC-Q101, TrenchFET®	View
	NVMFS5844NLT1G	ON Semiconductor, N-Channel 60V 11.2A (Ta) 3.7W (Ta), 107W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL),	View
	AOT2500L	Alpha & Omega Semiconductor Inc., N-Channel 150V 11.5A (Ta), 152A (Tc) 2.1W (Ta), 375W (Tc) Through Hole TO-220,	View
	CSD17579Q3A	Texas Instruments, N-Channel 30V 20A (Ta) 3.2W (Ta), 29W (Tc) Surface Mount 8-VSONP (3x3.15), NexFET™	View

SIHJ10N60E-T1-GE3 - Tags

SIHJ10N60E-T1-GE3 SIHJ10N60E-T1-GE3 PDF SIHJ10N60E-T1-GE3 datasheet SIHJ10N60E-T1-GE3 specification SIHJ10N60E-T1-GE3 image SIHJ10N60E-T1-GE3 India Renesas Electronics India SIHJ10N60E-T1-GE3 buy SIHJ10N60E-T1-GE3 SIHJ10N60E-T1-GE3 price SIHJ10N60E-T1-GE3 distributor SIHJ10N60E-T1-GE3 supplier SIHJ10N60E-T1-GE3 wholesales