RGT8NS65DGTL
RGT8NS65DGTL
Part Number RGT8NS65DGTL
Description IGBT 650V 8A 65W TO-263S
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Lead Time To be Confirmed
Detailed Description IGBT Trench Field Stop 650V 8A 65W Surface Mount LPDS (TO-263S)
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RGT8NS65DGTL - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - IGBTs - Single
Datasheet RGT8NS65D
Standard Package 1
Manufacturer Rohm Semiconductor
Series -
Packaging Cut Tape (CT)
Part Status Active
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650V
Current - Collector (Ic) (Max) 8A
Current - Collector Pulsed (Icm) 12A
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 4A
Power - Max 65W
Switching Energy -
Input Type Standard
Gate Charge 13.5nC
Td (on/off) @ 25°C 17ns/69ns
Test Condition 400V, 4A, 50Ohm, 15V
Reverse Recovery Time (trr) 40ns
Operating Temperature -40°C ~ 175°C (TJ)
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package LPDS (TO-263S)
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