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RGT8NS65DGTL

RGT8NS65DGTL

Part NumberRGT8NS65DGTL

ManufacturerRohm Semiconductor

DescriptionIGBT 650V 8A 65W TO-263S

DatasheetRGT8NS65D

Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionIGBT Trench Field Stop 650V 8A 65W Surface Mount LPDS (TO-263S)

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RGT8NS65DGTL - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - IGBTs - Single
Datasheet	RGT8NS65D
Standard Package	1
Manufacturer	Rohm Semiconductor
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
IGBT Type	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)	650V
Current - Collector (Ic) (Max)	8A
Current - Collector Pulsed (Icm)	12A
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 4A
Power - Max	65W
Switching Energy	-
Input Type	Standard
Gate Charge	13.5nC
Td (on/off) @ 25°C	17ns/69ns
Test Condition	400V, 4A, 50Ohm, 15V
Reverse Recovery Time (trr)	40ns
Operating Temperature	-40°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package	LPDS (TO-263S)

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