RGT8NS65DGTL
RGT8NS65DGTL
Part Number RGT8NS65DGTL Description IGBT 650V 8A 65W TO-263S Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263ABUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description IGBT Trench Field Stop 650V 8A 65W Surface Mount LPDS (TO-263S)
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RGT8NS65DGTL - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - IGBTs - Single
Datasheet RGT8NS65D Standard Package 1 Manufacturer Rohm Semiconductor Series - Packaging Cut Tape (CT) Part Status Active IGBT Type Trench Field Stop Voltage - Collector Emitter Breakdown (Max) 650V Current - Collector (Ic) (Max) 8A Current - Collector Pulsed (Icm) 12A Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 4A Power - Max 65W Switching Energy - Input Type Standard Gate Charge 13.5nC Td (on/off) @ 25°C 17ns/69ns Test Condition 400V, 4A, 50Ohm, 15V Reverse Recovery Time (trr) 40ns Operating Temperature -40°C ~ 175°C (TJ) Mounting Type Surface Mount Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package LPDS (TO-263S)
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