Categories	Discrete Semiconductor Products / Transistors - IGBTs - Single
Datasheet	RGW80TS65D
Standard Package	450
Manufacturer	Rohm Semiconductor
Series	-
Part Status	Active
IGBT Type	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)	650V
Current - Collector (Ic) (Max)	78A
Current - Collector Pulsed (Icm)	160A
Vce(on) (Max) @ Vge, Ic	1.9V @ 15V, 40A
Power - Max	214W
Switching Energy	760µJ (on), 720µJ (off)
Input Type	Standard
Gate Charge	110nC
Td (on/off) @ 25°C	44ns/143ns
Test Condition	400V, 40A, 10Ohm, 15V
Reverse Recovery Time (trr)	92ns
Operating Temperature	-40°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247N

IKQ75N120CH3XKSA1	Infineon Technologies, IGBT 1200V 150A 938W Through Hole PG-TO247-3-46,	View
FGY40T120SMD	ON Semiconductor, IGBT Trench Field Stop 1200V 80A 882W Through Hole TO-247,	View
STGP19NC60SD	STMicroelectronics, IGBT 600V 40A 130W Through Hole TO-220, PowerMESH™	View
SGS10N60RUFDTU	ON Semiconductor, IGBT 600V 16A 55W Through Hole TO-220F,	View
STGF15H60DF	STMicroelectronics, IGBT Trench Field Stop 600V 30A 30W Through Hole TO-220FP,	View
IXBK75N170	IXYS, IGBT 1700V 200A 1040W Through Hole TO-264, BIMOSFET™	View
IKB20N60TATMA1	Infineon Technologies, IGBT Trench Field Stop 600V 40A 166W Surface Mount PG-TO263, TrenchStop®	View
HGTG30N60B3D	ON Semiconductor, IGBT 600V 60A 208W Through Hole TO-247-3,	View
STGW30NC60VD	STMicroelectronics, IGBT 600V 80A 250W Through Hole TO-247-3, PowerMESH™	View
IKW15N120H3FKSA1	Infineon Technologies, IGBT Trench Field Stop 1200V 30A 217W Through Hole PG-TO247-3, TrenchStop®	View
IXBK55N300	IXYS, IGBT 3000V 130A 625W Through Hole TO-264, BIMOSFET™	View
RGT60TS65DGC11	Rohm Semiconductor, IGBT Trench Field Stop 650V 55A 194W Through Hole TO-247N,	View

RGW80TS65DGC11

Part NumberRGW80TS65DGC11