RJP020N06T100

Part NumberRJP020N06T100

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	RJP020N06
Standard Package	1
Manufacturer	Rohm Semiconductor
Series	-
Packaging	Cut Tape (CT)
Part Status	Not For New Designs
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	240mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	10nC @ 4V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	160pF @ 10V
FET Feature	-
Power Dissipation (Max)	500mW (Ta)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	MPT3
Package / Case	TO-243AA

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