RJP020N06T100
RJP020N06T100
Part Number RJP020N06T100 Description MOSFET N-CH 60V 2A SOT-89 Package / Case TO-243AAUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 60V 2A (Ta) 500mW (Ta) Surface Mount MPT3
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RJP020N06T100 - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet RJP020N06 Standard Package 1 Manufacturer Rohm Semiconductor Series - Packaging Cut Tape (CT) Part Status Not For New Designs FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 2A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 240mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 10nC @ 4V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 160pF @ 10V FET Feature - Power Dissipation (Max) 500mW (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package MPT3 Package / Case TO-243AA
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