RN1703JE(TE85L,F)

Part NumberRN1703JE(TE85L,F)

ManufacturerToshiba Semiconductor and Storage

DescriptionTRANS 2NPN PREBIAS 0.1W ESV

DatasheetRN1701JE-06JE

Package / CaseSOT-553

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionPre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) (Emitter Coupled) 50V 100mA 250MHz 100mW Surface Mount ESV

To learn about the specification of RN1703JE(TE85L,F), please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add RN1703JE(TE85L,F) with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of RN1703JE(TE85L,F).
We are offering RN1703JE(TE85L,F) for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

RN1703JE(TE85L,F) - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Datasheet	RN1701JE-06JE
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Current - Collector (Ic) (Max)	100mA
Voltage - Collector Emitter Breakdown (Max)	50V
Resistor - Base (R1)	22kOhms
Resistor - Emitter Base (R2)	22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic	300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)	100nA (ICBO)
Frequency - Transition	250MHz
Power - Max	100mW
Mounting Type	Surface Mount
Package / Case	SOT-553
Supplier Device Package	ESV

RN1703JE(TE85L,F) - Related Products

More >>

EMH11T2R	Rohm Semiconductor, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount EMT6,	View
EMH10T2R	Rohm Semiconductor, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount EMT6,	View
BCR135SH6327XTSA1	Infineon Technologies, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 150MHz 250mW Surface Mount PG-SOT363-6,	View
EMH61T2R	Rohm Semiconductor, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 50mA 250MHz 150mW Surface Mount EMT6,	View
RN1608(TE85L,F)	Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 300mW Surface Mount SM6,	View
DMC564030R	Panasonic Electronic Components, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 150mW Surface Mount SMini6-F3-B,	View
PUMH16,115	Nexperia USA Inc., Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 300mW Surface Mount 6-TSSOP,	View
DDC143ZU-7-F	Diodes Incorporated, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 200mW Surface Mount SOT-363,	View
DMC964010R	Panasonic Electronic Components, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 125mW Surface Mount SSMini6-F3-B,	View
RN1606(TE85L,F)	Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 300mW Surface Mount SM6,	View
PUMH17,115	Nexperia USA Inc., Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 300mW Surface Mount 6-TSSOP,	View
IMH14AT108	Rohm Semiconductor, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 300mW Surface Mount SMT6,	View

RN1703JE(TE85L,F) - Tags

RN1703JE(TE85L,F) RN1703JE(TE85L,F) PDF RN1703JE(TE85L,F) datasheet RN1703JE(TE85L,F) specification RN1703JE(TE85L,F) image RN1703JE(TE85L,F) India Renesas Electronics India RN1703JE(TE85L,F) buy RN1703JE(TE85L,F) RN1703JE(TE85L,F) price RN1703JE(TE85L,F) distributor RN1703JE(TE85L,F) supplier RN1703JE(TE85L,F) wholesales