RQ3C150BCTB


RQ3C150BCTB

Part NumberRQ3C150BCTB

Manufacturer

Description

Datasheet

Package / Case8-PowerVDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

RQ3C150BCTB - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package1
ManufacturerRohm Semiconductor
Series-
PackagingCut Tape (CT)
Part StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V
Rds On (Max) @ Id, Vgs6.7mOhm @ 15A, 4.5V
Vgs(th) (Max) @ Id1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs60nC @ 4.5V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds4800pF @ 10V
FET Feature-
Power Dissipation (Max)20W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-HSMT (3.2x3)
Package / Case8-PowerVDFN

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