Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SQ3481EV-T1_GE3

SQ3481EV-T1_GE3

SQ3481EV-T1_GE3

Part NumberSQ3481EV-T1_GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CHANNEL 30V 7.5A 6TSOP

DatasheetSQ3481EV

Package / CaseSOT-23-6 Thin, TSOT-23-6

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 30V 7.5A (Tc) 4W (Tc) Surface Mount 6-TSOP

To learn about the specification of SQ3481EV-T1_GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SQ3481EV-T1_GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SQ3481EV-T1_GE3.
We are offering SQ3481EV-T1_GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SQ3481EV-T1_GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SQ3481EV
Standard Package	1
Manufacturer	Vishay Siliconix
Series	Automotive, AEC-Q101, TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	7.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	43mOhm @ 5.3A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	23.5nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	870pF @ 15V
FET Feature	-
Power Dissipation (Max)	4W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	6-TSOP
Package / Case	SOT-23-6 Thin, TSOT-23-6

SQ3481EV-T1_GE3 - Related Products

	SI2323CDS-T1-GE3	Vishay Siliconix, P-Channel 20V 6A (Tc) 1.25W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236), TrenchFET®	View
	FDFMA2P853	ON Semiconductor, P-Channel 20V 3A (Ta) 1.4W (Ta) Surface Mount 6-MicroFET (2x2), PowerTrench®	View
	IRLML6402TRPBF	Infineon Technologies, P-Channel 20V 3.7A (Ta) 1.3W (Ta) Surface Mount Micro3™/SOT-23, HEXFET®	View
	DMP1022UFDF-7	Diodes Incorporated, P-Channel 12V 9.5A (Ta) 730mW (Ta) Surface Mount U-DFN2020-6 (Type F),	View
	SSM6J216FE,LF	Toshiba Semiconductor and Storage, P-Channel 12V 4.8A (Ta) 700mW (Ta) Surface Mount ES6, U-MOSVI	View
	SPD18P06PGBTMA1	Infineon Technologies, P-Channel 60V 18.6A (Tc) 80W (Tc) Surface Mount PG-TO252-3, SIPMOS®	View
	NTD2955T4G	ON Semiconductor, P-Channel 60V 12A (Ta) 55W (Tj) Surface Mount DPAK,	View
	MCH6351-TL-W	ON Semiconductor, P-Channel 12V 9A (Ta) 1.5W (Ta) Surface Mount 6-MCPH,	View
	SI5459DU-T1-GE3	Vishay Siliconix, P-Channel 20V 8A (Tc) 3.5W (Ta), 10.9W (Tc) Surface Mount PowerPAK® ChipFet Single, TrenchFET®	View
	SQA401EEJ-T1_GE3	Vishay Siliconix, P-Channel 20V 2.68A (Tc) 13.6W (Tc) Surface Mount PowerPAK® SC-70-6 Single, Automotive, AEC-Q101, TrenchFET®	View
	SSM3J46CTB(TPL3)	Toshiba Semiconductor and Storage, P-Channel 20V 2A (Ta) Surface Mount CST3B, U-MOSVI	View
	AOD409	Alpha & Omega Semiconductor Inc., P-Channel 60V 26A (Tc) 2.5W (Ta), 60W (Tc) Surface Mount TO-252, (D-Pak),	View

SQ3481EV-T1_GE3 - Tags

SQ3481EV-T1_GE3 SQ3481EV-T1_GE3 PDF SQ3481EV-T1_GE3 datasheet SQ3481EV-T1_GE3 specification SQ3481EV-T1_GE3 image SQ3481EV-T1_GE3 India Renesas Electronics India SQ3481EV-T1_GE3 buy SQ3481EV-T1_GE3 SQ3481EV-T1_GE3 price SQ3481EV-T1_GE3 distributor SQ3481EV-T1_GE3 supplier SQ3481EV-T1_GE3 wholesales