SI4463BDY-T1-GE3
SI4463BDY-T1-GE3
Part Number SI4463BDY-T1-GE3 Description MOSFET P-CH 20V 9.8A 8SOIC Package / Case 8-SOIC (0.154", 3.90mm Width)Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 20V 9.8A (Ta) 1.5W (Ta) Surface Mount 8-SO
To learn about the specification of SI4463BDY-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI4463BDY-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI4463BDY-T1-GE3.
We are offering SI4463BDY-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SI4463BDY-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SI4463BDY Standard Package 2500 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Tape & Reel (TR) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 9.8A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V Rds On (Max) @ Id, Vgs 11mOhm @ 13.7A, 10V Vgs(th) (Max) @ Id 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 56nC @ 4.5V Vgs (Max) ±12V FET Feature - Power Dissipation (Max) 1.5W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SO Package / Case 8-SOIC (0.154", 3.90mm Width)
SI4463BDY-T1-GE3 - Related ProductsMore >>
SI4483ADY-T1-GE3 Vishay Siliconix, P-Channel 30V 19.2A (Tc) 2.9W (Ta), 5.9W (Tc) Surface Mount 8-SO, TrenchFET®
View
FQD17P06TM ON Semiconductor, P-Channel 60V 12A (Tc) 2.5W (Ta), 44W (Tc) Surface Mount D-Pak, QFET®
View
FDMC2523P ON Semiconductor, P-Channel 150V 3A (Tc) 42W (Tc) Surface Mount 8-MLP (3.3x3.3), QFET®
View
IXTP28P065T IXYS, P-Channel 65V 28A (Tc) 83W (Tc) Through Hole TO-220AB, TrenchP™
View
SI7121ADN-T1-GE3 Vishay Siliconix, P-Channel 30V 12A (Ta) 3.5W (Ta), 27.8W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®
View
SSM6J207FE,LF Toshiba Semiconductor and Storage, P-Channel 30V 1.4A (Ta) 500mW (Ta) Surface Mount ES6 (1.6x1.6), U-MOSII
View
TSM9435CS RLG Taiwan Semiconductor Corporation, P-Channel 30V 5.3A (Tc) 5.3W (Tc) Surface Mount 8-SOP,
View
SI2319DS-T1-E3 Vishay Siliconix, P-Channel 40V 2.3A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236), TrenchFET®
View
RQ7E055ATTCR Rohm Semiconductor, P-Channel 30V 5.5A (Tc) 1.5W (Tc) Surface Mount TSMT8,
View
ZVP2120GTA Diodes Incorporated, P-Channel 200V 200mA (Ta) 2W (Ta) Surface Mount SOT-223,
View
SQS401EN-T1_GE3 Vishay Siliconix, P-Channel 40V 16A (Tc) 62.5W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®
View
DMP1200UFR4-7 Diodes Incorporated, P-Channel 12V 2A (Ta) 480mW (Ta) Surface Mount X2-DFN1010-3,
View
SI4463BDY-T1-GE3 - Tags
English
