Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI2319DS-T1-E3

SI2319DS-T1-E3

SI2319DS-T1-E3

Part NumberSI2319DS-T1-E3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 40V 2.3A SOT23-3

DatasheetSI2319DS

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 40V 2.3A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)

To learn about the specification of SI2319DS-T1-E3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2319DS-T1-E3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2319DS-T1-E3.
We are offering SI2319DS-T1-E3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI2319DS-T1-E3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI2319DS
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	82mOhm @ 3A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	17nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	470pF @ 20V
FET Feature	-
Power Dissipation (Max)	750mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3

SI2319DS-T1-E3 - Related Products

	IRF5305PBF	Infineon Technologies, P-Channel 55V 31A (Tc) 110W (Tc) Through Hole TO-220AB, HEXFET®	View
	SPD18P06PGBTMA1	Infineon Technologies, P-Channel 60V 18.6A (Tc) 80W (Tc) Surface Mount PG-TO252-3, SIPMOS®	View
	SI8457DB-T1-E1	Vishay Siliconix, P-Channel 12V 1.1W (Ta), 2.7W (Tc) Surface Mount 4-MICRO FOOT® (1.6x1.6), TrenchFET®	View
	IRFR5410TRPBF	Infineon Technologies, P-Channel 100V 13A (Tc) 66W (Tc) Surface Mount D-Pak, HEXFET®	View
	DMPH6050SK3-13	Diodes Incorporated, P-Channel 60V 7.2A (Ta), 23.6A (Tc) 1.9W (Ta) Surface Mount TO-252, (D-Pak),	View
	NVF6P02T3G	ON Semiconductor, P-Channel 20V 10A (Ta) 8.3W (Ta) Surface Mount SOT-223 (TO-261), Automotive, AEC-Q101	View
	NX2301P,215	Nexperia USA Inc., P-Channel 20V 2A (Ta) 400mW (Ta), 2.8W (Tc) Surface Mount TO-236AB, Automotive, AEC-Q101, TrenchMOS™	View
	TSM3443CX6 RFG	Taiwan Semiconductor Corporation, P-Channel 20V 4.7A (Ta) 2W (Ta) Surface Mount SOT-26,	View
	DMP6050SFG-13	Diodes Incorporated, P-Channel 60V 4.8A (Ta) 1.1W (Ta) Surface Mount PowerDI3333-8,	View
	SUM110P08-11L-E3	Vishay Siliconix, P-Channel 80V 110A (Tc) 13.6W (Ta), 375W (Tc) Surface Mount TO-263 (D2Pak), TrenchFET®	View
	SI7431DP-T1-E3	Vishay Siliconix, P-Channel 200V 2.2A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	PMZ950UPELYL	Nexperia USA Inc., P-Channel 20V 500mA (Ta) 360mW (Ta), 2.7W (Tc) Surface Mount DFN1006-3,	View

SI2319DS-T1-E3 - Tags

SI2319DS-T1-E3 SI2319DS-T1-E3 PDF SI2319DS-T1-E3 datasheet SI2319DS-T1-E3 specification SI2319DS-T1-E3 image SI2319DS-T1-E3 India Renesas Electronics India SI2319DS-T1-E3 buy SI2319DS-T1-E3 SI2319DS-T1-E3 price SI2319DS-T1-E3 distributor SI2319DS-T1-E3 supplier SI2319DS-T1-E3 wholesales