Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SISH101DN-T1-GE3

SISH101DN-T1-GE3

SISH101DN-T1-GE3

Part NumberSISH101DN-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 30V POWERPAK 1212

DatasheetSISH101DN Datasheet

Package / CasePowerPAK® 1212-8SH

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 30V 16.9A (Ta), 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8SH

To learn about the specification of SISH101DN-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SISH101DN-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SISH101DN-T1-GE3.
We are offering SISH101DN-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SISH101DN-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SISH101DN Datasheet
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	16.9A (Ta), 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	7.2mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	102nC @ 10V
Vgs (Max)	±25V
Input Capacitance (Ciss) (Max) @ Vds	3595pF @ 15V
FET Feature	-
Power Dissipation (Max)	3.7W (Ta), 52W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8SH
Package / Case	PowerPAK® 1212-8SH

SISH101DN-T1-GE3 - Related Products

	DMG2301LK-7	Diodes Incorporated, P-Channel 20V 2.4A (Ta) 840mW (Ta) Surface Mount SOT-23, Automotive, AEC-Q101	View
	IRF4905PBF	Infineon Technologies, P-Channel 55V 74A (Tc) 200W (Tc) Through Hole TO-220AB, HEXFET®	View
	NDS8434	ON Semiconductor, P-Channel 20V 6.5A (Ta) 2.5W (Ta) Surface Mount 8-SOIC,	View
	PMZ950UPELYL	Nexperia USA Inc., P-Channel 20V 500mA (Ta) 360mW (Ta), 2.7W (Tc) Surface Mount DFN1006-3,	View
	FDME910PZT	ON Semiconductor, P-Channel 20V 8A (Ta) 2.1W (Ta) Surface Mount MicroFet 1.6x1.6 Thin, PowerTrench®	View
	SI6423DQ-T1-E3	Vishay Siliconix, P-Channel 12V 8.2A (Ta) 1.05W (Ta) Surface Mount 8-TSSOP, TrenchFET®	View
	SI4421DY-T1-E3	Vishay Siliconix, P-Channel 20V 10A (Ta) 1.5W (Ta) Surface Mount 8-SO, TrenchFET®	View
	SPD04P10PLGBTMA1	Infineon Technologies, P-Channel 100V 4.2A (Tc) 38W (Tc) Surface Mount PG-TO252-3, SIPMOS®	View
	SQ2351ES-T1_GE3	Vishay Siliconix, P-Channel 20V 3.2A (Tc) 2W (Tc) Surface Mount SOT-23-3 (TO-236), Automotive, AEC-Q101, TrenchFET®	View
	DMP2104LP-7	Diodes Incorporated, P-Channel 20V 1.5A (Ta) 500mW (Ta) Surface Mount 3-DFN1411 (1.4x1.1),	View
	RZF013P01TL	Rohm Semiconductor, P-Channel 12V 1.3A (Ta) 800mW (Ta) Surface Mount TUMT3,	View
	TP0610T-G	Microchip Technology, P-Channel 60V 120mA (Tj) 360mW (Ta) Surface Mount TO-236AB (SOT23),	View

SISH101DN-T1-GE3 - Tags

SISH101DN-T1-GE3 SISH101DN-T1-GE3 PDF SISH101DN-T1-GE3 datasheet SISH101DN-T1-GE3 specification SISH101DN-T1-GE3 image SISH101DN-T1-GE3 India Renesas Electronics India SISH101DN-T1-GE3 buy SISH101DN-T1-GE3 SISH101DN-T1-GE3 price SISH101DN-T1-GE3 distributor SISH101DN-T1-GE3 supplier SISH101DN-T1-GE3 wholesales