Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SISH101DN-T1-GE3

SISH101DN-T1-GE3

SISH101DN-T1-GE3

Part NumberSISH101DN-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 30V POWERPAK 1212

DatasheetSISH101DN Datasheet

Package / CasePowerPAK® 1212-8SH

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 30V 16.9A (Ta), 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8SH

To learn about the specification of SISH101DN-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SISH101DN-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SISH101DN-T1-GE3.
We are offering SISH101DN-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SISH101DN-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SISH101DN Datasheet
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	16.9A (Ta), 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	7.2mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	102nC @ 10V
Vgs (Max)	±25V
Input Capacitance (Ciss) (Max) @ Vds	3595pF @ 15V
FET Feature	-
Power Dissipation (Max)	3.7W (Ta), 52W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8SH
Package / Case	PowerPAK® 1212-8SH

SISH101DN-T1-GE3 - Related Products

	IXTR48P20P	IXYS, P-Channel 200V 30A (Tc) 190W (Tc) Through Hole ISOPLUS247™, PolarP™	View
	BSS84AKM,315	Nexperia USA Inc., P-Channel 50V 230mA (Ta) 340mW (Ta), 2.7W (Tc) Surface Mount DFN1006-3, Automotive, AEC-Q101, TrenchMOS™	View
	FQP2P40-F080	ON Semiconductor, P-Channel 400V 2A (Tc) 63W (Tc) Through Hole TO-220-3, QFET®	View
	BSS84AKMB,315	Nexperia USA Inc., P-Channel 50V 230mA (Ta) 360mW (Ta), 2.7W (Tc) Surface Mount DFN1006B-3,	View
	MCQ4435-TP	Micro Commercial Co, P-Channel 30V 9.1A (Tj) 1.4W (Tj) Surface Mount 8-SOP,	View
	SSM3J15FV,L3F	Toshiba Semiconductor and Storage, P-Channel 30V 100mA (Ta) 150mW (Ta) Surface Mount VESM, π-MOSVI	View
	DMP2066UFDE-7	Diodes Incorporated, P-Channel 20V 6.2A (Ta) 660mW (Ta) Surface Mount U-DFN2020-6 (Type E),	View
	SI1411DH-T1-GE3	Vishay Siliconix, P-Channel 150V 420mA (Ta) 1W (Ta) Surface Mount, TrenchFET®	View
	FDG332PZ	ON Semiconductor, P-Channel 20V 2.6A (Ta) 750mW (Ta) Surface Mount SC-88 (SC-70-6), PowerTrench®	View
	AO4425	Alpha & Omega Semiconductor Inc., P-Channel 38V 14A (Ta) 3.1W (Ta) Surface Mount 8-SOIC,	View
	SUM55P06-19L-E3	Vishay Siliconix, P-Channel 60V 55A (Tc) 3.75W (Ta), 125W (Tc) Surface Mount TO-263 (D2Pak), TrenchFET®	View
	NTNUS3171PZT5G	ON Semiconductor, P-Channel 20V 150mA (Ta) 125mW (Ta) Surface Mount SOT-1123,	View

SISH101DN-T1-GE3 - Tags

SISH101DN-T1-GE3 SISH101DN-T1-GE3 PDF SISH101DN-T1-GE3 datasheet SISH101DN-T1-GE3 specification SISH101DN-T1-GE3 image SISH101DN-T1-GE3 India Renesas Electronics India SISH101DN-T1-GE3 buy SISH101DN-T1-GE3 SISH101DN-T1-GE3 price SISH101DN-T1-GE3 distributor SISH101DN-T1-GE3 supplier SISH101DN-T1-GE3 wholesales