Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI2309CDS-T1-E3

SI2309CDS-T1-E3

SI2309CDS-T1-E3

Part NumberSI2309CDS-T1-E3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 60V 1.6A SOT23-3

DatasheetSI2309CDS

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 60V 1.6A (Tc) 1W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)

To learn about the specification of SI2309CDS-T1-E3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2309CDS-T1-E3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2309CDS-T1-E3.
We are offering SI2309CDS-T1-E3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI2309CDS-T1-E3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI2309CDS
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	1.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	345mOhm @ 1.25A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	4.1nC @ 4.5V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	210pF @ 30V
FET Feature	-
Power Dissipation (Max)	1W (Ta), 1.7W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3
Base Part Number	SI2309

SI2309CDS-T1-E3 - Related Products

	SIA447DJ-T1-GE3	Vishay Siliconix, P-Channel 12V 12A (Tc) 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single, TrenchFET®	View
	SI7115DN-T1-E3	Vishay Siliconix, P-Channel 150V 8.9A (Tc) 52W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	SI7461DP-T1-E3	Vishay Siliconix, P-Channel 60V 8.6A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	IRF7241TRPBF	Infineon Technologies, P-Channel 40V 6.2A (Ta) 2.5W (Ta) Surface Mount 8-SO, HEXFET®	View
	SI4427BDY-T1-E3	Vishay Siliconix, P-Channel 30V 9.7A (Ta) 1.5W (Ta) Surface Mount 8-SO, TrenchFET®	View
	IXTH8P50	IXYS, P-Channel 500V 8A (Tc) 180W (Tc) Through Hole TO-247 (IXTH),	View
	SSM6J507NU,LF	Toshiba Semiconductor and Storage, P-Channel 30V 10A (Ta) 1.25W (Ta) Surface Mount 6-UDFNB (2x2), U-MOSVI	View
	SQ2301ES-T1_GE3	Vishay Siliconix, P-Channel 20V 3.9A (Tc) 3W (Tc) Surface Mount TO-236 (SOT-23), Automotive, AEC-Q101, TrenchFET®	View
	SSM6J50TU,LF	Toshiba Semiconductor and Storage, P-Channel 20V 2.5A (Ta) 500mW (Ta) Surface Mount UF6, U-MOSIV	View
	MCQ4953-TP	Micro Commercial Co, P-Channel 30V 5.1A 2.5W Surface Mount 8-SOP,	View
	SQM120P04-04L_GE3	Vishay Siliconix, P-Channel 40V 120A (Tc) 375W (Tc) Surface Mount, Automotive, AEC-Q101, TrenchFET®	View
	TSM2301ACX RFG	Taiwan Semiconductor Corporation, P-Channel 20V 2.8A (Tc) 700mW (Ta) Surface Mount SOT-23,	View

SI2309CDS-T1-E3 - Tags

SI2309CDS-T1-E3 SI2309CDS-T1-E3 PDF SI2309CDS-T1-E3 datasheet SI2309CDS-T1-E3 specification SI2309CDS-T1-E3 image SI2309CDS-T1-E3 India Renesas Electronics India SI2309CDS-T1-E3 buy SI2309CDS-T1-E3 SI2309CDS-T1-E3 price SI2309CDS-T1-E3 distributor SI2309CDS-T1-E3 supplier SI2309CDS-T1-E3 wholesales