Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI2309CDS-T1-E3

SI2309CDS-T1-E3

SI2309CDS-T1-E3

Part NumberSI2309CDS-T1-E3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 60V 1.6A SOT23-3

DatasheetSI2309CDS

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 60V 1.6A (Tc) 1W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)

To learn about the specification of SI2309CDS-T1-E3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2309CDS-T1-E3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2309CDS-T1-E3.
We are offering SI2309CDS-T1-E3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI2309CDS-T1-E3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI2309CDS
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	1.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	345mOhm @ 1.25A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	4.1nC @ 4.5V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	210pF @ 30V
FET Feature	-
Power Dissipation (Max)	1W (Ta), 1.7W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3
Base Part Number	SI2309

SI2309CDS-T1-E3 - Related Products

	RZR040P01TL	Rohm Semiconductor, P-Channel 12V 4A (Ta) 1W (Ta) Surface Mount TSMT3,	View
	BSZ086P03NS3EGATMA1	Infineon Technologies, P-Channel 30V 13.5A (Ta), 40A (Tc) 2.1W (Ta), 69W (Tc) Surface Mount PG-TSDSON-8, OptiMOS™	View
	NTHS4101PT1G	ON Semiconductor, P-Channel 20V 4.8A (Tj) 1.3W (Ta) Surface Mount ChipFET™,	View
	FQU17P06TU	ON Semiconductor, P-Channel 60V 12A (Tc) 2.5W (Ta), 44W (Tc) Through Hole I-PAK, QFET®	View
	IRFR9024TRPBF	Vishay Siliconix, P-Channel 60V 8.8A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-Pak,	View
	SI9435BDY-T1-E3	Vishay Siliconix, P-Channel 30V 4.1A (Ta) 1.3W (Ta) Surface Mount 8-SO, TrenchFET®	View
	TP5335K1-G	Microchip Technology, P-Channel 350V 85mA (Tj) 360mW (Ta) Surface Mount TO-236AB (SOT23),	View
	STD10P6F6	STMicroelectronics, P-Channel 60V 10A (Tc) 35W (Tc) Surface Mount DPAK, DeepGATE™, STripFET™ VI	View
	IXTP18P10T	IXYS, P-Channel 100V 18A (Tc) 83W (Tc) Through Hole TO-220AB, TrenchP™	View
	SQP50P03-07_GE3	Vishay Siliconix, P-Channel 30V 50A (Tc) 150W (Tc) Through Hole TO-220AB, Automotive, AEC-Q101, TrenchFET®	View
	DMP6180SK3-13	Diodes Incorporated, P-Channel 60V 14A (Tc) 1.7W (Ta) Surface Mount TO-252,	View
	SQD40081EL_GE3	Vishay Siliconix, P-Channel 40V 50A (Tc) 71W (Tc) Surface Mount TO-252AA, Automotive, AEC-Q101, TrenchFET®	View

SI2309CDS-T1-E3 - Tags

SI2309CDS-T1-E3 SI2309CDS-T1-E3 PDF SI2309CDS-T1-E3 datasheet SI2309CDS-T1-E3 specification SI2309CDS-T1-E3 image SI2309CDS-T1-E3 India Renesas Electronics India SI2309CDS-T1-E3 buy SI2309CDS-T1-E3 SI2309CDS-T1-E3 price SI2309CDS-T1-E3 distributor SI2309CDS-T1-E3 supplier SI2309CDS-T1-E3 wholesales