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RQ3E100BNTB

RQ3E100BNTB

Part NumberRQ3E100BNTB

ManufacturerRohm Semiconductor

DescriptionMOSFET N-CH 30V 10A HSMT8

DatasheetRQ3E100BN

Package / Case8-PowerVDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 10A (Ta) 2W (Ta) Surface Mount 8-HSMT (3.2x3)

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RQ3E100BNTB - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	RQ3E100BN
Standard Package	1
Manufacturer	Rohm Semiconductor
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	10A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	10.4mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	22nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1100pF @ 15V
FET Feature	-
Power Dissipation (Max)	2W (Ta)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-HSMT (3.2x3)
Package / Case	8-PowerVDFN

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