RQ3E150BNTB
RQ3E150BNTB
Part Number RQ3E150BNTB Description MOSFET N-CH 30V 15A HSMT8 Package / Case 8-PowerVDFNUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 30V 15A (Ta) 2W (Ta) Surface Mount 8-HSMT (3.2x3)
To learn about the specification of RQ3E150BNTB, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add RQ3E150BNTB with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of RQ3E150BNTB.
We are offering RQ3E150BNTB for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
RQ3E150BNTB - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet RQ3E150BN Standard Package 3000 Manufacturer Rohm Semiconductor Series - Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 15A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 5.3mOhm @ 15A, 10V Vgs(th) (Max) @ Id 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3000pF @ 15V FET Feature - Power Dissipation (Max) 2W (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-HSMT (3.2x3) Package / Case 8-PowerVDFN
RQ3E150BNTB - Related ProductsMore >>
APT38N60BC6 Microsemi Corporation, N-Channel 600V 38A (Tc) 278W (Tc) Through Hole TO-247 [B], CoolMOS™
View
SI3410DV-T1-GE3 Vishay Siliconix, N-Channel 30V 8A (Tc) 2W (Ta), 4.1W (Tc) Surface Mount 6-TSOP, TrenchFET®
View
TN0104N3-G Microchip Technology, N-Channel 40V 450mA (Ta) 1W (Tc) Through Hole TO-92-3,
View
IRL3103PBF Infineon Technologies, N-Channel 30V 64A (Tc) 94W (Tc) Through Hole TO-220AB, HEXFET®
View
IRLB8748PBF Infineon Technologies, N-Channel 30V 78A (Tc) 75W (Tc) Through Hole TO-220AB, HEXFET®
View
IPU95R450P7AKMA1 Infineon Technologies, N-Channel 950V 14A (Tc) 104W (Tc) Through Hole PG-TO251-3, CoolMOS™ P7
View
SSM3K16FU,LF Toshiba Semiconductor and Storage, N-Channel 20V 100mA (Ta) 150mW (Ta) Surface Mount USM, π-MOSVI
View
FDV303N ON Semiconductor, N-Channel 25V 680mA (Ta) 350mW (Ta) Surface Mount SOT-23,
View
FK3506010L Panasonic Electronic Components, N-Channel 60V 100mA (Ta) 150mW (Ta) Surface Mount SMini3-F2-B,
View
FDMC86102LZ ON Semiconductor, N-Channel 100V 7A (Ta), 18A (Tc) 2.3W (Ta), 41W (Tc) Surface Mount 8-MLP (3.3x3.3), PowerTrench®
View
IXFY36N20X3 IXYS, N-Channel 200V 36A (Tc) 176W (Tc) Surface Mount TO-252AA, HiPerFET™
View
STS10N3LH5 STMicroelectronics, N-Channel 30V 10A (Tc) 2.5W (Tc) Surface Mount 8-SO, STripFET™ V
View
RQ3E150BNTB - Tags
English
