RQ3E180BNTB
RQ3E180BNTB
Part Number RQ3E180BNTB Description MOSFET N-CHANNEL 30V 39A 8HSMT Package / Case 8-PowerVDFNUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 30V 39A (Tc) 2W (Ta), 20W (Tc) Surface Mount 8-HSMT (3.2x3)
To learn about the specification of RQ3E180BNTB, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add RQ3E180BNTB with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of RQ3E180BNTB.
We are offering RQ3E180BNTB for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
RQ3E180BNTB - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet RQ3E180BN Datasheet Standard Package 1 Manufacturer Rohm Semiconductor Series - Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 39A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 3.9mOhm @ 18A, 10V Vgs(th) (Max) @ Id 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 37nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3500pF @ 15V FET Feature - Power Dissipation (Max) 2W (Ta), 20W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-HSMT (3.2x3) Package / Case 8-PowerVDFN
RQ3E180BNTB - Related ProductsMore >>
IRLZ44NPBF Infineon Technologies, N-Channel 55V 47A (Tc) 3.8W (Ta), 110W (Tc) Through Hole TO-220AB, HEXFET®
View
FQN1N60CTA ON Semiconductor, N-Channel 600V 300mA (Tc) 1W (Ta), 3W (Tc) Through Hole TO-92-3, QFET®
View
TSM650N15CR RLG Taiwan Semiconductor Corporation, N-Channel 150V 24A (Tc) 96W (Tc) Surface Mount 8-PDFN (5x6),
View
FDPF045N10A ON Semiconductor, N-Channel 100V 67A (Tc) 43W (Tc) Through Hole TO-220F, PowerTrench®
View
TK1K2A60F,S4X Toshiba Semiconductor and Storage, N-Channel 600V 6A (Ta) 35W (Tc) Through Hole TO-220SIS, U-MOSIX
View
2N7002H-7 Diodes Incorporated, N-Channel 60V 170mA (Ta) 370mW (Ta) Surface Mount SOT-23,
View
ZVN4206GVTA Diodes Incorporated, N-Channel 60V 1A (Ta) 2W (Ta) Surface Mount SOT-223,
View
IRFZ34PBF Vishay Siliconix, N-Channel 60V 30A (Tc) 88W (Tc) Through Hole TO-220AB,
View
SIR472ADP-T1-GE3 Vishay Siliconix, N-Channel 30V 18A (Tc) 3.3W (Ta), 14.7W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®
View
R5011FNJTL Rohm Semiconductor, N-Channel 500V 11A (Tc) 50W (Tc) Surface Mount LPTS,
View
STD12N65M2 STMicroelectronics, N-Channel 650V 8A (Tc) 85W (Tc) Surface Mount DPAK, MDmesh™ M2
View
SIHB25N50E-GE3 Vishay Siliconix, N-Channel 500V 26A (Tc) 250W (Tc) Surface Mount TO-263 (D²Pak),
View
RQ3E180BNTB - Tags
English
