RS1E280BNTB
RS1E280BNTB
Part Number RS1E280BNTB Description MOSFET N-CH 30V 28A 8HSOP Package / Case 8-PowerTDFNUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 30V 28A (Ta) 3W (Ta), 30W (Tc) Surface Mount 8-HSOP
To learn about the specification of RS1E280BNTB, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add RS1E280BNTB with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of RS1E280BNTB.
We are offering RS1E280BNTB for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
RS1E280BNTB - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet RS1E280BN Standard Package 2500 Manufacturer Rohm Semiconductor Series - Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 28A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 2.3mOhm @ 28A, 10V Vgs(th) (Max) @ Id 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 94nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 5100pF @ 15V FET Feature - Power Dissipation (Max) 3W (Ta), 30W (Tc) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-HSOP Package / Case 8-PowerTDFN
RS1E280BNTB - Related ProductsMore >>
IPB80N03S4L03ATMA1 Infineon Technologies, N-Channel 30V 80A (Tc) 94W (Tc) Surface Mount PG-TO263-3-2, OptiMOS™
View
RUU002N05T106 Rohm Semiconductor, N-Channel 50V 200mA (Ta) 200mW (Ta) Surface Mount UMT3,
View
IPN80R4K5P7ATMA1 Infineon Technologies, N-Channel 800V 1.5A (Tc) 6W (Tc) Surface Mount PG-SOT223, CoolMOS™ P7
View
STW14NK50Z STMicroelectronics, N-Channel 500V 14A (Tc) 150W (Tc) Through Hole TO-247-3, SuperMESH™
View
SI7636DP-T1-E3 Vishay Siliconix, N-Channel 30V 17A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8, TrenchFET®
View
SIHH068N60E-T1-GE3 Vishay Siliconix, N-Channel 600V 34A (Tc) 202W (Tc) Surface Mount PowerPAK® 8 x 8,
View
ZVN3310A Diodes Incorporated, N-Channel 100V 200mA (Ta) 625mW (Ta) Through Hole TO-92-3,
View
IRFS4410TRLPBF Infineon Technologies, N-Channel 100V 88A (Tc) 200W (Tc) Surface Mount D²PAK (TO-263AB), HEXFET®
View
STP27N60M2-EP STMicroelectronics, N-Channel 600V 20A (Tc) 170W (Tc) Through Hole TO-220, MDmesh™ M2-EP
View
STD17NF03LT4 STMicroelectronics, N-Channel 30V 17A (Tc) 30W (Tc) Surface Mount DPAK, STripFET™ II
View
SIHB16N50C-E3 Vishay Siliconix, N-Channel 500V 16A (Tc) 250W (Tc) Surface Mount D²PAK (TO-263),
View
BUK9Y09-40B,115 Nexperia USA Inc., N-Channel 40V 75A (Tc) 105.3W (Tc) Surface Mount LFPAK56, Power-SO8, Automotive, AEC-Q101, TrenchMOS™
View
RS1E280BNTB - Tags
English
