RS1P600BETB1

Part NumberRS1P600BETB1

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	RS1P600BE
Standard Package	2500
Manufacturer	Rohm Semiconductor
Series	-
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	17.5A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	9.7mOhm @ 17.5A, 10V
Vgs(th) (Max) @ Id	4V @ 500µA
Gate Charge (Qg) (Max) @ Vgs	33nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2200pF @ 50V
FET Feature	-
Power Dissipation (Max)	3W (Ta), 35W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-HSOP
Package / Case	8-PowerTDFN

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