Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ BSP299H6327XUSA1

BSP299H6327XUSA1

BSP299H6327XUSA1

Part NumberBSP299H6327XUSA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 500V 0.4A SOT-223

DatasheetBSP299

Package / CaseTO-261-4, TO-261AA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 500V 400mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4

To learn about the specification of BSP299H6327XUSA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add BSP299H6327XUSA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of BSP299H6327XUSA1.
We are offering BSP299H6327XUSA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

BSP299H6327XUSA1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	BSP299
Standard Package	1
Manufacturer	Infineon Technologies
Series	SIPMOS®
Packaging	Cut Tape (CT)
Part Status	Not For New Designs
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25°C	400mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	4Ohm @ 400mA, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	400pF @ 25V
FET Feature	-
Power Dissipation (Max)	1.8W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-SOT223-4
Package / Case	TO-261-4, TO-261AA

BSP299H6327XUSA1 - Related Products

	SI2304BDS-T1-GE3	Vishay Siliconix, N-Channel 30V 2.6A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236), TrenchFET®	View
	STD110N8F6	STMicroelectronics, N-Channel 80V 80A (Tc) 167W (Tc) Surface Mount DPAK, STripFET™ F6	View
	BUK9M43-100EX	Nexperia USA Inc., N-Channel 100V 25A (Tc) 80W (Tc) Surface Mount LFPAK33, Automotive, AEC-Q101, TrenchMOS™	View
	SIJ438ADP-T1-GE3	Vishay Siliconix, N-Channel 40V 45.3A (Ta), 169A(Tc) 5W (Ta), 69.4W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV	View
	IAUT300N08S5N012ATMA2	Infineon Technologies, N-Channel 80V 300A (Tc) 375W (Tc) Surface Mount PG-HSOF-8-1, OptiMOS™	View
	STF6N60M2	STMicroelectronics, N-Channel 600V 4.5A (Ta) 20W (Tc) Through Hole TO-220FP, MDmesh™ II Plus	View
	PHB20N06T,118	Nexperia USA Inc., N-Channel 55V 20.3A (Tc) 62W (Tc) Surface Mount D2PAK, TrenchMOS™	View
	DMN2046U-7	Diodes Incorporated, N-Channel 20V 3.4A (Ta) 760mW (Ta) Surface Mount SOT-23,	View
	STB14NM50N	STMicroelectronics, N-Channel 500V 12A (Tc) 90W (Tc) Surface Mount D2PAK, MDmesh™ II	View
	BSB014N04LX3GXUMA1	Infineon Technologies, N-Channel 40V 36A (Ta), 180A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount MG-WDSON-2, CanPAK M™, OptiMOS™	View
	STI24NM60N	STMicroelectronics, N-Channel 600V 17A (Tc) 125W (Tc) Through Hole I2PAK, MDmesh™ II	View
	VN2460N3-G	Microchip Technology, N-Channel 600V 160mA (Tj) 1W (Ta) Through Hole TO-92-3,	View

BSP299H6327XUSA1 - Tags

BSP299H6327XUSA1 BSP299H6327XUSA1 PDF BSP299H6327XUSA1 datasheet BSP299H6327XUSA1 specification BSP299H6327XUSA1 image BSP299H6327XUSA1 India Renesas Electronics India BSP299H6327XUSA1 buy BSP299H6327XUSA1 BSP299H6327XUSA1 price BSP299H6327XUSA1 distributor BSP299H6327XUSA1 supplier BSP299H6327XUSA1 wholesales