Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	RUM002N02
Standard Package	1
Manufacturer	Rohm Semiconductor
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.2V, 2.5V
Rds On (Max) @ Id, Vgs	1.2Ohm @ 200mA, 2.5V
Vgs(th) (Max) @ Id	1V @ 1mA
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	25pF @ 10V
FET Feature	-
Power Dissipation (Max)	150mW (Ta)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	VMT3
Package / Case	SOT-723

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SIHB120N60E-GE3	Vishay Siliconix, N-Channel 600V 25A (Tc) 179W (Tc) Surface Mount D²PAK (TO-263),	View
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RUM002N02T2L

Part NumberRUM002N02T2L