RW1E015RPT2R


RW1E015RPT2R

Part NumberRW1E015RPT2R

Manufacturer

Description

Datasheet

Package / CaseSOT-563, SOT-666

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

RW1E015RPT2R - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package1
ManufacturerRohm Semiconductor
Series-
PackagingCut Tape (CT)
Part StatusNot For New Designs
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Rds On (Max) @ Id, Vgs160mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs6.5nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds230pF @ 10V
FET Feature-
Power Dissipation (Max)400mW (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package6-WEMT
Package / CaseSOT-563, SOT-666

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