RYC002N05T316


RYC002N05T316

Part NumberRYC002N05T316

Manufacturer

Description

Datasheet

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

RYC002N05T316 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package1
ManufacturerRohm Semiconductor
Series-
PackagingCut Tape (CT)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)50V
Current - Continuous Drain (Id) @ 25°C200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V
Rds On (Max) @ Id, Vgs2.2Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id800mV @ 1mA
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds26pF @ 10V
FET Feature-
Power Dissipation (Max)350mW (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSST3
Package / CaseTO-236-3, SC-59, SOT-23-3

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