Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ RYC002N05T316

RYC002N05T316

RYC002N05T316

Part NumberRYC002N05T316

ManufacturerRohm Semiconductor

DescriptionMOSFET N-CHANNEL 50V 200MA SST3

DatasheetRYC002N05

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 50V 200mA (Ta) 350mW (Tc) Surface Mount SST3

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RYC002N05T316 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	RYC002N05
Standard Package	1
Manufacturer	Rohm Semiconductor
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	50V
Current - Continuous Drain (Id) @ 25°C	200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V
Rds On (Max) @ Id, Vgs	2.2Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id	800mV @ 1mA
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	26pF @ 10V
FET Feature	-
Power Dissipation (Max)	350mW (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SST3
Package / Case	TO-236-3, SC-59, SOT-23-3

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