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SI1013X-T1-GE3

SI1013X-T1-GE3

Part NumberSI1013X-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 20V 350MA SC89-3

DatasheetSi1013R,X

Package / CaseSC-89, SOT-490

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 20V 350mA (Ta) 250mW (Ta) Surface Mount SC-89-3

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SI1013X-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	Si1013R,X
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	350mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	1.2Ohm @ 350mA, 4.5V
Vgs(th) (Max) @ Id	450mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs	1.5nC @ 4.5V
Vgs (Max)	±6V
FET Feature	-
Power Dissipation (Max)	250mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SC-89-3
Package / Case	SC-89, SOT-490

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