Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI1050X-T1-GE3

SI1050X-T1-GE3

SI1050X-T1-GE3

Part NumberSI1050X-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 8V 1.34A SC-89-6

DatasheetSI1050X

Package / CaseSOT-563, SOT-666

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 8V 1.34A (Ta) 236mW (Ta) Surface Mount SC-89-6

To learn about the specification of SI1050X-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI1050X-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI1050X-T1-GE3.
We are offering SI1050X-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI1050X-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI1050X
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	8V
Current - Continuous Drain (Id) @ 25°C	1.34A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Rds On (Max) @ Id, Vgs	86mOhm @ 1.34A, 4.5V
Vgs(th) (Max) @ Id	900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	11.6nC @ 5V
Vgs (Max)	±5V
Input Capacitance (Ciss) (Max) @ Vds	585pF @ 4V
FET Feature	-
Power Dissipation (Max)	236mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SC-89-6
Package / Case	SOT-563, SOT-666

SI1050X-T1-GE3 - Related Products

	IRF3205STRLPBF	Infineon Technologies, N-Channel 55V 110A (Tc) 200W (Tc) Surface Mount D2PAK, HEXFET®	View
	TK100L60W,VQ	Toshiba Semiconductor and Storage, N-Channel 600V 100A (Ta) 797W (Tc) Through Hole TO-3P(L), DTMOSIV	View
	NDDP010N25AZT4H	ON Semiconductor, N-Channel 250V 10A (Ta) 1W (Ta), 52W (Tc) Surface Mount DPAK/TP-FA,	View
	DMN1260UFA-7B	Diodes Incorporated, N-Channel 12V 500mA (Ta) 360mW (Ta) Surface Mount X2-DFN0806-3,	View
	FQD7N10LTM	ON Semiconductor, N-Channel 100V 5.8A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount D-Pak, QFET®	View
	STP270N8F7	STMicroelectronics, N-Channel 80V 180A (Tc) 315W (Tc) Through Hole TO-220, DeepGATE™, STripFET™ VII	View
	CSD17579Q5AT	Texas Instruments, N-Channel 30V 25A (Ta) 3.1W (Ta), 36W (Tc) Surface Mount 8-VSONP (5x6), NexFET™	View
	2N7002K-T1-E3	Vishay Siliconix, N-Channel 60V 300mA (Ta) 350mW (Ta) Surface Mount SOT-23-3 (TO-236), TrenchFET®	View
	IRLML6246TRPBF	Infineon Technologies, N-Channel 20V 4.1A (Ta) 1.3W (Ta) Surface Mount Micro3™/SOT-23, HEXFET®	View
	STP12NM50FP	STMicroelectronics, N-Channel 500V 12A (Tc) 35W (Tc) Through Hole TO-220FP, MDmesh™	View
	STB13N80K5	STMicroelectronics, N-Channel 800V 12A (Tc) 190W (Tc) Surface Mount D2PAK, SuperMESH5™	View
	TSM025NB04CR RLG	Taiwan Semiconductor Corporation, N-Channel 40V 24A (Ta), 161A (Tc) 3.1W (Ta), 136W (Tc) Surface Mount 8-PDFN (5x6),	View

SI1050X-T1-GE3 - Tags

SI1050X-T1-GE3 SI1050X-T1-GE3 PDF SI1050X-T1-GE3 datasheet SI1050X-T1-GE3 specification SI1050X-T1-GE3 image SI1050X-T1-GE3 India Renesas Electronics India SI1050X-T1-GE3 buy SI1050X-T1-GE3 SI1050X-T1-GE3 price SI1050X-T1-GE3 distributor SI1050X-T1-GE3 supplier SI1050X-T1-GE3 wholesales