SI1070X-T1-GE3
SI1070X-T1-GE3
Part Number SI1070X-T1-GE3
Description MOSFET N-CH 30V 1.2A SOT563F
Package / Case SOT-563, SOT-666
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 30V 236mW (Ta) Surface Mount SC-89-6
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SI1070X-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet Si1070X
Standard Package 1
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C -
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 99mOhm @ 1.2A, 4.5V
Vgs(th) (Max) @ Id 1.55V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.3nC @ 5V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 385pF @ 15V
FET Feature -
Power Dissipation (Max) 236mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SC-89-6
Package / Case SOT-563, SOT-666
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