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SI1070X-T1-GE3


SI1070X-T1-GE3

Part NumberSI1070X-T1-GE3

Manufacturer

Description

Datasheet

Package / CaseSOT-563, SOT-666

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

SI1070X-T1-GE3 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package3000
ManufacturerVishay Siliconix
SeriesTrenchFET®
PackagingTape & Reel (TR)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C-
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs99mOhm @ 1.2A, 4.5V
Vgs(th) (Max) @ Id1.55V @ 250µA
Gate Charge (Qg) (Max) @ Vgs8.3nC @ 5V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds385pF @ 15V
FET Feature-
Power Dissipation (Max)236mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSC-89-6
Package / CaseSOT-563, SOT-666

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SI1070X-T1-GE3 - Tags

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