SI1077X-T1-GE3
SI1077X-T1-GE3
Part Number SI1077X-T1-GE3 Description MOSFET P-CH 20V SC89-6 Package / Case SOT-563, SOT-666Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 20V 330mW (Ta) Surface Mount SC-89-6
To learn about the specification of SI1077X-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI1077X-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI1077X-T1-GE3.
We are offering SI1077X-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SI1077X-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SI1077X-T1-GE3 Standard Package 3000 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Tape & Reel (TR) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C - Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V Rds On (Max) @ Id, Vgs 78mOhm @ 1.8A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 31.1nC @ 8V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 965pF @ 10V FET Feature - Power Dissipation (Max) 330mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SC-89-6 Package / Case SOT-563, SOT-666
SI1077X-T1-GE3 - Related ProductsMore >>
SI8481DB-T1-E1 Vishay Siliconix, P-Channel 20V 9.7A (Tc) 2.8W (Tc) Surface Mount 4-MICRO FOOT® (1.6x1.6), TrenchFET® Gen III
View
NTR4502PT1G ON Semiconductor, P-Channel 30V 1.13A (Ta) 400mW (Tj) Surface Mount SOT-23-3 (TO-236),
View
NVTFS5124PLTAG ON Semiconductor, P-Channel 60V 2.4A (Ta) 3W (Ta), 18W (Tc) Surface Mount 8-WDFN (3.3x3.3),
View
RW1C025ZPT2CR Rohm Semiconductor, P-Channel 20V 2.5A (Ta) 700mW (Ta) Surface Mount 6-WEMT,
View
RW1A013ZPT2R Rohm Semiconductor, P-Channel 12V 1.5A (Ta) 400mW (Ta) Surface Mount 6-WEMT,
View
PMV48XP,215 Nexperia USA Inc., P-Channel 20V 3.5A (Ta) 510mW (Ta) Surface Mount TO-236AB,
View
SI4403CDY-T1-GE3 Vishay Siliconix, P-Channel 20V 13.4A (Tc) 5W (Tc) Surface Mount 8-SO, TrenchFET®
View
DMP1009UFDF-7 Diodes Incorporated, P-Channel 12V 15A (Ta) 2W (Ta) Surface Mount U-DFN2020-6 (Type F),
View
ZVP2110GTA Diodes Incorporated, P-Channel 100V 310mA (Ta) 2W (Ta) Surface Mount SOT-223,
View
SI1411DH-T1-GE3 Vishay Siliconix, P-Channel 150V 420mA (Ta) 1W (Ta) Surface Mount SOT-363, TrenchFET®
View
SQ3427EV-T1_GE3 Vishay Siliconix, P-Channel 60V 5.3A (Tc) 5W (Tc) Surface Mount 6-TSOP, Automotive, AEC-Q101, TrenchFET®
View
TP2540N3-G Microchip Technology, P-Channel 400V 86mA (Tj) 740mW (Ta) Through Hole TO-92-3,
View
SI1077X-T1-GE3 - Tags
English
