Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIS427EDN-T1-GE3

SIS427EDN-T1-GE3

SIS427EDN-T1-GE3

Part NumberSIS427EDN-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 30V 50A 1212-8

DatasheetSIS427EDN

Package / CasePowerPAK® 1212-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 30V 50A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

To learn about the specification of SIS427EDN-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIS427EDN-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIS427EDN-T1-GE3.
We are offering SIS427EDN-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIS427EDN-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIS427EDN
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	10.6mOhm @ 11A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	66nC @ 10V
Vgs (Max)	±25V
Input Capacitance (Ciss) (Max) @ Vds	1930pF @ 15V
FET Feature	-
Power Dissipation (Max)	3.7W (Ta), 52W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8
Package / Case	PowerPAK® 1212-8

SIS427EDN-T1-GE3 - Related Products

	STT4P3LLH6	STMicroelectronics, P-Channel 30V 4A (Ta) 1.6W (Ta) Surface Mount SOT-23-6, DeepGATE™, STripFET™ H6	View
	NDS0610	ON Semiconductor, P-Channel 60V 120mA (Ta) 360mW (Ta) Surface Mount SOT-23,	View
	IRFD9014PBF	Vishay Siliconix, P-Channel 60V 1.1A (Ta) 1.3W (Ta) Through Hole 4-DIP, Hexdip, HVMDIP,	View
	SSM3J371R,LF	Toshiba Semiconductor and Storage, P-Channel 20V 4A (Ta) 1W (Ta) Surface Mount SOT-23F, U-MOSVI	View
	DMP2045U-7	Diodes Incorporated, P-Channel 20V 4.3A (Ta) 800mW (Ta) Surface Mount SOT-23,	View
	SI7431DP-T1-GE3	Vishay Siliconix, P-Channel 200V 2.2A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	6HP04CH-TL-W	ON Semiconductor, P-Channel 60V 370mA (Ta) Surface Mount 3-CPH,	View
	IRFR9024NTRPBF	Infineon Technologies, P-Channel 55V 11A (Tc) 38W (Tc) Surface Mount D-Pak, HEXFET®	View
	IRF9640STRRPBF	Vishay Siliconix, P-Channel 200V 11A (Tc) 125W (Tc) Surface Mount D2PAK,	View
	FQD2P40TM	ON Semiconductor, P-Channel 400V 1.56A (Tc) 2.5W (Ta), 38W (Tc) Surface Mount D-Pak, QFET®	View
	FDMS6673BZ	ON Semiconductor, P-Channel 30V 15.2A (Ta), 28A (Tc) 2.5W (Ta), 73W (Tc) Surface Mount 8-PQFN (5x6), PowerTrench®	View
	NVGS3443T1G	ON Semiconductor, P-Channel 20V 3.1A (Ta) Surface Mount 6-TSOP,	View

SIS427EDN-T1-GE3 - Tags

SIS427EDN-T1-GE3 SIS427EDN-T1-GE3 PDF SIS427EDN-T1-GE3 datasheet SIS427EDN-T1-GE3 specification SIS427EDN-T1-GE3 image SIS427EDN-T1-GE3 India Renesas Electronics India SIS427EDN-T1-GE3 buy SIS427EDN-T1-GE3 SIS427EDN-T1-GE3 price SIS427EDN-T1-GE3 distributor SIS427EDN-T1-GE3 supplier SIS427EDN-T1-GE3 wholesales