SI1403BDL-T1-GE3
SI1403BDL-T1-GE3
Part Number SI1403BDL-T1-GE3
Description MOSFET P-CH 20V 1.5A SC70-6
Package / Case 6-TSSOP, SC-88, SOT-363
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Lead Time To be Confirmed
Detailed Description P-Channel 20V 1.5A (Ta) 625mW (Ta) Surface Mount SC-70-6
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SI1403BDL-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SI1403BDL
Standard Package 3000
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Tape & Reel (TR)
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 150mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id 1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 4.5nC @ 4.5V
Vgs (Max) ±12V
FET Feature -
Power Dissipation (Max) 625mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SC-70-6
Package / Case 6-TSSOP, SC-88, SOT-363
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