SI1427EDH-T1-GE3
SI1427EDH-T1-GE3
Part Number SI1427EDH-T1-GE3
Description MOSFET P-CH 20V 2A SOT-363
Package / Case 6-TSSOP, SC-88, SOT-363
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Lead Time To be Confirmed
Detailed Description P-Channel 20V 2A (Tc) 1.56W (Ta), 2.8W (Tc) Surface Mount SC-70-6 (SOT-363)
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SI1427EDH-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet Si1427EDH
Standard Package 1
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT)
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 64mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 21nC @ 8V
Vgs (Max) ±8V
FET Feature -
Power Dissipation (Max) 1.56W (Ta), 2.8W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SC-70-6 (SOT-363)
Package / Case 6-TSSOP, SC-88, SOT-363
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